MT48LC4M16A2P-6 IT:G
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 283 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.5 ns | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 12 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC4M16A2P-6 IT:G – IC DRAM 64MBIT PAR 54TSOP II
The MT48LC4M16A2P-6 IT:G is a 64 Mbit synchronous DRAM (SDRAM) organized as 4M × 16 with a parallel memory interface in a 54-pin TSOP II package. It implements fully synchronous operation with internal pipelining and bank architecture to support high-throughput, burst-oriented memory access.
Designed for board-level memory expansion in systems requiring industrial temperature operation and 3.0–3.6 V supply compatibility, the device offers fast access times and standard SDRAM features for embedded and industrial designs.
Key Features
- Core / Architecture 4M × 16 organization with four internal banks enabling hidden row access and concurrent operations to improve effective throughput.
- Memory 64 Mbit SDRAM capacity supporting programmable burst lengths of 1, 2, 4, 8 or full page and a 4,096-cycle refresh scheme (64 ms refresh period).
- Performance & Timing Clock frequency specified at 167 MHz with an access time of 5.5 ns and a write cycle time (word page) of 12 ns for low-latency data transfers.
- System Interface Parallel SDRAM interface with LVTTL-compatible inputs/outputs and fully synchronous signaling registered on the positive clock edge.
- Power Single-supply operation across 3.0 V–3.6 V supporting typical +3.3 V systems.
- Low-power & Refresh Modes Standard and low-power self-refresh modes plus auto refresh, auto precharge and concurrent auto precharge options for simplified power and refresh management.
- Package 54-pin TSOP II (0.400", 10.16 mm width) surface-mount package for compact board-level integration.
- Temperature Range Industrial-grade operating temperature from –40 °C to +85 °C (TA) for use in temperature-demanding environments.
- Standards Compatibility Documented PC66-, PC100- and PC133-compliant options and internal timing options noted in the datasheet.
Typical Applications
- Industrial Systems Industrial operating temperature range (–40 °C to +85 °C) and 3.0–3.6 V operation make the device suitable for industrial control and automation boards requiring robust DRAM.
- Embedded Board-Level Memory 54-pin TSOP II package and parallel SDRAM interface fit embedded platforms and legacy boards that use parallel SDRAM memory expansion.
- High‑throughput Buffering Internal pipelined operation, multi-bank architecture and programmable burst lengths support applications needing burst-oriented buffering and data staging.
Unique Advantages
- Industrial Temperature Rating: Specified operation from –40 °C to +85 °C enables deployment in temperature-demanding applications without additional thermal qualification steps.
- Flexible Burst and Refresh Options: Programmable burst lengths with auto and concurrent auto precharge plus standard/low-power self-refresh modes simplify memory control and power management.
- Fast Access and Cycle Times: 5.5 ns access time and 12 ns write cycle time (word page) provide low-latency data access for performance-sensitive tasks.
- Standard Voltage Support: 3.0–3.6 V supply range aligns with common +3.3 V system rails for straightforward integration.
- Compact Board Integration: 54-pin TSOP II package (0.400" / 10.16 mm width) supports dense PCB layouts while providing full parallel SDRAM connectivity.
- Well-documented SDRAM Feature Set: Fully synchronous operation, LVTTL-compatible I/O and multi-bank organization are specified in the datasheet for predictable system design.
Why Choose IC DRAM 64MBIT PAR 54TSOP II?
The MT48LC4M16A2P-6 IT:G is positioned as a compact, industrial-temperature SDRAM solution for designers requiring a 64 Mbit parallel memory device with predictable timing and standard power rails. Its combination of internal pipelining, programmable burst lengths and self-refresh modes addresses common board-level memory needs where consistent performance and thermal tolerance are required.
This device is suitable for engineers implementing embedded and legacy parallel-SDRAM interfaces who need documented timing, compact TSOP II packaging and a 3.0–3.6 V operating range to simplify integration and maintainable designs over the product lifecycle.
Request a quote or contact sales to discuss pricing, availability and to submit a formal quote request for the MT48LC4M16A2P-6 IT:G.