MT48LC4M16A2F4-7E:G TR

The MT48LC4M16A2F4-7E:G TR is a 64 Mbit synchronous DRAM organized as 4M × 16 with a parallel memory interface in a 54-ball VFBGA (8×8) package. It implements SDR SDRAM architecture with internal banks and pipelined operation suitable for systems requiring PC100/PC133-compliant parallel SDRAM.

Designed for commercial-temperature operation, this device targets board-level memory applications that require 3.0–3.6 V supply operation, programmable burst operation, and standard SDRAM control features such as auto refresh and auto precharge.

Key Features

• Memory Architecture 64 Mbit capacity organized as 4M × 16 with 4 internal banks for concurrent row access and hidden precharge.
• SDR SDRAM Core Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation for column-address changes every clock cycle.
• Performance Clock frequency up to 133 MHz; the -7E speed grade supports 2-2-2 timing (RCD–RP–CL = 15 ns). Device data lists an access time of 5.4 ns and a word-page write cycle time of 14 ns.
• Burst and Refresh Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, auto refresh and self-refresh modes (standard and low power where available) with 4K refresh cycles.
• Interface and I/O LVTTL-compatible inputs and outputs with a parallel memory interface and fully synchronous control signals.
• Voltage and Power Single-supply operation within 3.0 V to 3.6 V (3.3 V ±0.3 V as specified in the SDRAM datasheet).
• Package and Temperature 54-ball VFBGA (8×8) package; commercial operating temperature range 0 °C to +70 °C.

Typical Applications

• PC100/PC133-compatible systems — Use as standard SDRAM in systems and designs requiring PC100 or PC133-compliant parallel memory.
• Board-level memory expansion — Suitable for custom boards that require a 64 Mbit 4M × 16 SDRAM in a compact 54-ball VFBGA package at 3.3 V supply.
• Designs requiring programmable burst and refresh control — Ideal where programmable burst lengths, auto precharge, and auto/self-refresh modes are required for memory sequencing.

Unique Advantages

• Standard SDRAM feature set: Provides fully synchronous, pipelined SDRAM operation with internal banks and programmable burst lengths for predictable timing and memory sequencing.
• PC100/PC133 compliance: Matches established SDRAM timing classes for system interoperability at 133 MHz speed grade.
• Compact VFBGA package: 54-ball (8×8) VFBGA enables board-level integration where small footprint and controlled-ball-grid packaging are required.
• Flexible timing options: -7E speed grade delivers 2-2-2 timing at 133 MHz (15 ns RCD/RP/CL), providing a defined performance point for timing-sensitive designs.
• Robust refresh and power modes: Auto refresh and self-refresh support simplifies memory maintenance across power and idle conditions.
• Industry-standard I/O levels: LVTTL-compatible inputs and outputs simplify interfacing to common logic families at 3.3 V supply.

Why Choose MT48LC4M16A2F4-7E:G TR?

The MT48LC4M16A2F4-7E:G TR offers a compact, standard SDRAM solution in a 64 Mbit 4M × 16 organization suitable for commercial-temperature applications requiring PC100/PC133-class parallel memory. Its combination of pipelined, fully synchronous operation, programmable burst lengths, and built-in refresh/autoprecharge capabilities delivers predictable timing and manageable memory control for board-level designs.

This device is appropriate for designers who need a defined 133 MHz speed-grade SDRAM in a 54-ball VFBGA footprint, with documented timing (including the -7E 2-2-2 option) and clear electrical requirements (3.0–3.6 V supply and 0 °C to +70 °C operation).

If you would like pricing, availability, or a formal quote for the MT48LC4M16A2F4-7E:G TR, submit a request or inquiry and include the full part number to receive a prompt response.