MT48LC4M16A2B4-7E:G TR
| Part Description |
IC DRAM 64MBIT PARALLEL 54VFBGA |
|---|---|
| Quantity | 529 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-VFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC4M16A2B4-7E:G TR – IC DRAM 64MBIT PARALLEL 54VFBGA
The MT48LC4M16A2B4-7E:G TR is a 64 Mbit volatile SDRAM organized as 4M × 16 with a parallel memory interface. It is supplied in a 54-ball VFBGA (8×8) package and is intended for synchronous DRAM use in systems operating from a 3.0–3.6 V supply.
Designed for synchronous, pipelined operation at up to 133 MHz, the device provides internal banked architecture, programmable burst lengths and standard auto-refresh/self-refresh modes as documented in the product datasheet.
Key Features
- Memory Architecture 4M × 16 organization delivering 64 Mbit of DRAM capacity with 4 internal banks for row access and precharge management.
- SDR SDRAM — Synchronous Operation Fully synchronous operation with signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
- Performance & Timing 133 MHz clock frequency (speed grade -7E). Datasheet timing options include CL = 2-2-2 (15 ns) for the -7E grade; product specification lists an access time of 5.4 ns and a write cycle time (word/page) of 14 ns.
- Power Single-supply operation at 3.0–3.6 V (3.3 V ±0.3 V); supports auto refresh and self-refresh modes per the datasheet.
- Burst and Refresh Modes Programmable burst lengths (1, 2, 4, 8, or full page) plus auto precharge and auto refresh; 64 ms/4096-cycle refresh for commercial devices as documented.
- Package & Mounting 54-ball VFBGA package (8 mm × 8 mm) for compact board-level mounting.
- Operating Conditions Commercial operating temperature range: 0°C to +70°C (TA).
Typical Applications
- PC100/PC133 systems — Use as synchronous DRAM memory in systems designed for PC100 or PC133 timing and performance.
- Embedded and board-level memory — Provides 64 Mbit parallel SDRAM storage in a compact 8×8 VFBGA footprint for space-constrained designs.
- Legacy parallel-memory designs — Drop-in SDRAM option for designs requiring a 4M × 16 parallel memory organization and standard SDR timing.
Unique Advantages
- Compact VFBGA footprint: 54-ball (8×8) VFBGA reduces PCB area for board-level memory implementations.
- Flexible timing options: Speed grade -7E supports 133 MHz operation with CL=2 timing (per datasheet), and programmable burst lengths allow trade-offs between throughput and access latency.
- Standard 3.3 V supply range: Operates across 3.0–3.6 V to align with common 3.3 V system rails.
- Synchronous, pipelined design: Fully synchronous operation with internal pipelining and banked architecture enables efficient column access and row precharge management.
- Built-in refresh and power modes: Auto refresh and self-refresh modes help maintain data integrity across refresh cycles.
Why Choose MT48LC4M16A2B4-7E:G TR?
The MT48LC4M16A2B4-7E:G TR delivers a compact, synchronous DRAM solution with a 4M × 16 memory organization and 64 Mbit capacity in a 54‑VFBGA package. Its 133 MHz support, programmable burst lengths and banked architecture provide flexible timing and throughput options for designs requiring parallel SDRAM.
This device is suited to commercial-temperature systems running at standard 3.3 V rails where a compact board-level SDRAM component with documented timing and refresh modes is required. Refer to the device datasheet for detailed timing tables, refresh requirements and package information when integrating into system designs.
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