MT48LC4M16A2B4-75 IT:G TR

The MT48LC4M16A2B4-75 IT:G TR is a 64 Mbit volatile SDRAM organized as 4M × 16 with a parallel memory interface in a 54-ball VFBGA (8 mm × 8 mm) package. It implements fully synchronous SDR SDRAM architecture with internal pipelined operation and bank management to support high-throughput, time-deterministic memory access for embedded and industrial systems.

Designed for systems requiring PC100/PC133-class synchronous DRAM performance, this device delivers a 133 MHz clock frequency (‑75 speed grade) and supports standard SDRAM features such as programmable burst lengths, auto refresh and self-refresh modes, providing integration and timing flexibility for memory subsystem designers.

Key Features

• Core / Architecture  Fully synchronous SDR SDRAM with internal pipelined operation and multiple internal banks to hide row access and precharge latencies.
• Memory Organization  4M × 16 organization delivering 64 Mbit total capacity with parallel interface suitable for x16 data buses.
• Performance & Timing  133 MHz clock frequency for the -75 speed grade; datasheet timing table lists a 3-3-3 RCD‑RP‑CL of 20 ns for the -75 grade. Access time is specified as 5.4 ns and write cycle time (word/page) is 15 ns in the product specifications.
• SDRAM Features  Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, auto refresh and self-refresh modes as defined in the device family datasheet.
• Power  Single supply operation with specified voltage range 3.0 V to 3.6 V (datasheet references single 3.3 V ±0.3 V operation).
• Interface / I/O  Parallel SDRAM interface with LVTTL‑compatible inputs and outputs as described in the product family documentation.
• Package & Mounting  54‑ball VFBGA (8 × 8 mm) package (54‑VFBGA) optimized for space‑constrained board designs.
• Operating Temperature  Industrial temperature range: −40°C to +85°C (TA), suitable for industrial environments.

Typical Applications

• Industrial Embedded Systems  Used as synchronous DRAM for control and data buffering in industrial controllers and instrumentation operating across −40°C to +85°C.
• Data Buffers and Frame Stores  Provides parallel, time-deterministic memory for frame buffering, intermediate storage, or scratch memory in embedded designs.
• Legacy Parallel Memory Designs  Suitable for systems that require a parallel SDRAM interface with x16 organization and PC100/PC133-class timing.

Unique Advantages

• Industrial Temperature Rating:  Specified for −40°C to +85°C operation, supporting deployments in harsher ambient conditions.
• PC100/PC133-Class Synchronous Operation:  133 MHz clock capability (‑75 speed grade) and documented 3-3-3 timing support common design timing requirements.
• Small, High‑Density Package:  54‑VFBGA (8×8 mm) reduces PCB area while providing x16 data width for parallel memory buses.
• Flexible SDRAM Functionality:  Programmable burst lengths, auto precharge/refresh, and self‑refresh modes enable designers to optimize throughput and power for target workloads.
• Industry‑documented Timing:  Datasheet timing parameters (RCD, RP, CL) and refresh behavior allow predictable system-level memory timing analysis and validation.

Why Choose MT48LC4M16A2B4-75 IT:G TR?

The MT48LC4M16A2B4-75 IT:G TR provides a compact, industrial‑rated SDRAM solution with 64 Mbit capacity in a 4M × 16 organization and a 54‑VFBGA package. Its synchronous SDRAM architecture, supported by documented PC100/PC133-class timing and standard SDRAM features (programmable bursts, auto refresh and self‑refresh), makes it suitable for embedded and industrial designs that require predictable parallel memory performance.

This device is appropriate for engineers who need a space-efficient, parallel SDRAM memory element with industrial temperature tolerance, clear timing specifications, and conventional 3.3 V-class power operation—facilitating integration into established memory subsystems and legacy parallel-memory architectures.

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