MT48LC4M16A2B4-7E:J TR

IC DRAM 64MBIT PARALLEL 54VFBGA
Part Description

IC DRAM 64MBIT PARALLEL 54VFBGA

Quantity 568 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-VFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging54-VFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M16A2B4-7E:J TR – IC DRAM 64Mbit Parallel 54-VFBGA

The MT48LC4M16A2B4-7E:J TR is a 64 Mbit volatile SDRAM organized as 4M × 16 with a parallel memory interface. It implements synchronous SDRAM architecture with internal pipelined operation and banked memory for efficient row/column access.

Targeted at designs that require a compact, parallel SDRAM device, this part offers PC100/PC133-compliant operation, a 133 MHz clock capability, and a 54-ball VFBGA (8 × 8 mm) package for board-level memory integration.

Key Features

  • Memory Architecture 64 Mbit SDRAM organized as 4M × 16 with internal banks to optimize row access and precharge sequencing.
  • SDR SDRAM Core Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
  • Performance 133 MHz clock frequency with an access time of 5.4 ns and a word page write cycle time of 14 ns for timing-sensitive designs.
  • Timing Options PC100- and PC133-compliant timing; datasheet lists programmable CAS/read latency and burst lengths (BL = 1, 2, 4, 8, or full page).
  • Refresh and Power Modes Auto refresh and self refresh modes are supported (standard and low-power modes noted in the datasheet; low-power not available on AT devices).
  • Interface and I/O Parallel memory interface with LVTTL-compatible inputs and outputs for system-level signaling compatibility.
  • Power Single-supply operation from 3.0 V to 3.6 V (3.3 V ±0.3 V as specified in the datasheet).
  • Package and Temperature 54-ball VFBGA (8 × 8 mm) package; commercial operating temperature range of 0°C to +70°C (TA).

Typical Applications

  • Parallel Memory Systems — Fits board-level designs that require a compact, parallel SDRAM device with 64 Mbit capacity and PC100/PC133 timing.
  • Embedded Boards — Provides synchronous DRAM storage for embedded systems needing a 4M × 16 memory organization in a small VFBGA footprint.
  • Timing-Critical Designs — Suited for applications that require defined access time and write cycle timing (5.4 ns access time, 14 ns word-page write cycle).

Unique Advantages

  • Compact VFBGA Package: 54-ball VFBGA (8 × 8 mm) minimizes PCB area for space-constrained designs.
  • Industry Timing Compliance: PC100 and PC133 timing compatibility simplifies integration with systems designed to those clock standards.
  • Flexible Burst and Bank Management: Programmable burst lengths and internal banks enable efficient data transfer patterns and hidden row access.
  • Standard Voltage Range: Operates from 3.0 V to 3.6 V, matching common 3.3 V system rails for straightforward power integration.
  • Deterministic Performance: Documented access time (5.4 ns) and write-cycle timing (14 ns) support predictable memory timing analysis.

Why Choose MT48LC4M16A2B4-7E:J TR?

The MT48LC4M16A2B4-7E:J TR provides a compact, parallel SDRAM solution with PC100/PC133-compliant timing, a 4M × 16 memory organization, and documented performance figures (133 MHz clock, 5.4 ns access time). Its 54-ball VFBGA package and 3.0–3.6 V supply range make it suitable for board-level memory integration where footprint and timing predictability matter.

This device is appropriate for designers needing a verified SDRAM component with programmable burst behavior, internal bank management, and standard refresh/power modes as specified in the datasheet. Its specification set supports practical deployment in systems that require a 64 Mbit parallel SDRAM element within a commercial temperature range.

Request a quote or submit an inquiry for pricing and availability of the MT48LC4M16A2B4-7E:J TR. Our team can provide lead-time and ordering information to support your design schedules.

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