MT48LC4M16A2F4-75:G TR
| Part Description |
IC DRAM 64MBIT PARALLEL 54VFBGA |
|---|---|
| Quantity | 910 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-VFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B2A | HTS Code | 8542.32.0002 |
Overview of MT48LC4M16A2F4-75:G TR – 64 Mbit SDRAM, x16, 54‑VFBGA, 133 MHz
The MT48LC4M16A2F4-75:G TR is a 64 Mbit volatile SDRAM device organized as 4M × 16 with a parallel memory interface in a 54‑ball VFBGA (8×8 mm) package. It provides fully synchronous SDR SDRAM operation with timing suited to PC100/PC133 clocking and a 133 MHz clock frequency rating.
This device targets systems that require compact, high-speed parallel DRAM with a single 3.3 V supply and commercial temperature operation (0°C to +70°C). Its internal pipelined operation and programmable burst lengths support systems requiring predictable, cycle-aligned memory transfers.
Key Features
- Memory Architecture — 4M × 16 organization delivering 64 Mbit of volatile SDRAM capacity in a parallel x16 configuration.
- SDR SDRAM Core — Fully synchronous operation with all signals registered on the positive edge of the system clock; internal pipelined operation allows column address changes every clock cycle.
- Performance — Clock frequency rated at 133 MHz with an access time of 5.4 ns and typical timing options compliant with PC100/PC133 speed grades.
- Burst and Refresh — Programmable burst lengths (1, 2, 4, 8, or full page) plus auto precharge, auto refresh and self-refresh modes as described in the device family datasheet.
- Power — Single‑rail 3.0 V to 3.6 V supply range supporting standard 3.3 V system rails.
- Package and Mounting — 54‑ball VFBGA (8 mm × 8 mm) package optimized for compact board-level integration; commercial operating temperature range of 0°C to +70°C.
- Timing and Cycle — Write cycle time (word page) specified at 15 ns; timing options include CL and RAS/RP parameters aligned with PC133 performance targets per the datasheet.
Typical Applications
- Parallel SDRAM systems — Drop-in memory for designs using parallel x16 SDRAM interfaces and PC100/PC133 timing.
- Compact board-level memory — Use where a 54‑VFBGA (8×8) footprint and 3.3 V supply are required for space-constrained modules or assemblies.
- Commercial electronic devices — Systems operating in the 0°C to +70°C range that need synchronous DRAM with programmable burst and refresh capabilities.
Unique Advantages
- Direct PC100/PC133 compatibility — Device family support for PC100 and PC133 timing simplifies integration into systems designed around those SDRAM timing standards.
- Synchronous, pipelined operation — Positive-edge clock registration and internal pipelining enable predictable, clock-aligned transfers and rapid column changes.
- Flexible burst control and refresh — Programmable burst lengths and built-in auto/self-refresh modes reduce host refresh management complexity.
- Compact VFBGA package — 54‑ball 8×8 mm VFBGA allows high density placement and a small board footprint for space-limited designs.
- Standard 3.3 V supply — Operates across a 3.0 V to 3.6 V range aligned with common system rails to ease power-supply design.
Why Choose IC DRAM 64MBIT PARALLEL 54VFBGA?
The MT48LC4M16A2F4-75:G TR combines a compact VFBGA package with PC100/PC133‑aligned SDRAM timing and a 4M × 16 architecture to deliver 64 Mbit of synchronous parallel memory suitable for systems requiring predictable timing, programmable bursts and integrated refresh features. Its 3.0 V–3.6 V supply range and commercial temperature rating make it appropriate for general-purpose electronic designs that rely on a 3.3 V memory rail.
This device is well suited for designers needing a verified SDRAM component from the MT48LCxMxA2 device family for board-level memory expansion, legacy parallel-memory interfaces, or compact modules where a 54‑VFBGA footprint and PC133-class timing are required.
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