MT48LC4M16A2P-6 IT:G TR

The MT48LC4M16A2P-6 IT:G TR is a 64 Mbit synchronous DRAM device organized as 4M × 16 with a parallel memory interface. It implements a fully synchronous, pipelined architecture with internal banks to optimize row access and precharge behavior.

This part is offered in a 54‑pin TSOP II package and supports an industrial operating temperature range of −40°C to +85°C with a supply range of 3.0 V to 3.6 V, providing a compact, voltage‑tolerant SDRAM option for systems requiring parallel DRAM storage at up to a 167 MHz clock frequency and 5.5 ns access time.

Key Features

• Memory Organization — 64 Mbit total capacity arranged as 4M × 16 with 4 internal banks, delivering parallel DRAM storage in a compact density.
• Fully Synchronous SDRAM — All signals are registered on the positive edge of the system clock; internal pipelined operation allows the column address to change every clock cycle.
• Programmable Burst and Refresh — Supports programmable burst lengths (1, 2, 4, 8, or full page) and standard auto refresh with a 64 ms, 4,096‑cycle refresh requirement.
• Auto and Self‑Refresh Modes — Includes Auto Precharge (including concurrent auto precharge) and both standard and low‑power self‑refresh modes.
• Performance — Specified clock frequency up to 167 MHz with an access time of 5.5 ns and a write cycle time (word/page) of 12 ns.
• Voltage and I/O — Single +3.3 V nominal supply (specified 3.0 V to 3.6 V) with LVTTL‑compatible inputs and outputs.
• Package — 54‑pin TSOP II (0.400", 10.16 mm width) plastic package for surface‑mount applications.
• Operating Temperature — Industrial temperature range: −40°C to +85°C (TA).

Unique Advantages

• Compact TSOP II package: 54‑pin 0.400" (10.16 mm) TSOP II package minimizes PCB footprint while providing a parallel DRAM interface.
• Flexible burst and refresh control: Programmable burst lengths and Auto/Self‑Refresh support enable tuning for different access patterns and power profiles.
• Pipelined internal architecture: Internal banks and pipelined operation allow column addresses to be changed each clock cycle for efficient throughput.
• Industrial temperature rating: −40°C to +85°C operating range supports use in temperature‑sensitive environments.
• Wide supply tolerance: 3.0 V to 3.6 V supply range (nominal +3.3 V) provides tolerance for typical 3.3 V system rails.
• LVTTL‑compatible signaling: Standard LVTTL inputs and outputs simplify interfacing with common system logic levels.

Why Choose IC DRAM 64MBIT PAR 54TSOP II?

The MT48LC4M16A2P-6 IT:G TR delivers a straightforward 64 Mbit parallel SDRAM solution based on a fully synchronous, pipelined architecture with internal banks and programmable burst modes. Its specified performance figures—167 MHz clock frequency and 5.5 ns access time—combine with standard LVTTL I/O and a 3.0 V to 3.6 V supply to fit designs that require reliable parallel DRAM memory in a small TSOP II package.

With industrial temperature operation and standard auto/self‑refresh features, this device is suited to applications that demand stable DRAM behavior across temperature and supply variations while retaining flexible access patterns and compact board integration.

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