MT48LC4M16A2B4-6A:J

IC DRAM 64MBIT PAR 54VFBGA
Part Description

IC DRAM 64MBIT PAR 54VFBGA

Quantity 1,136 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-VFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page12 nsPackaging54-VFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M16A2B4-6A:J – IC DRAM 64MBIT PAR 54VFBGA

The MT48LC4M16A2B4-6A:J is a 64 Mbit synchronous DRAM (SDRAM) device organized as 4M × 16 with a parallel memory interface. It is a volatile memory component offered in a 54-ball VFBGA (8 mm × 8 mm) package and operates from a 3.0 V to 3.6 V supply.

Designed for systems that use SDR SDRAM, this device supports high-speed synchronous operation at a 167 MHz clock frequency (–6A speed grade) and provides standard SDRAM features such as programmable burst lengths, auto precharge and auto refresh modes.

Key Features

  • Memory Architecture — 64 Mbit capacity organized as 4M × 16 with internal bank architecture for concurrent row access and precharge.
  • SDR SDRAM Technology — Fully synchronous operation with signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
  • Performance — 167 MHz clock frequency (–6A speed grade); timing table lists 3-3-3 RCD-RP-CL targets at this grade.
  • Access and Cycle Timing — Access time specified in product data; write cycle time (word/page) of 12 ns supports burst transfers.
  • Refresh and Self-Refresh — Auto refresh support with 4K refresh cycles and both standard and low-power self-refresh modes (low-power option noted in datasheet options).
  • Voltage and I/O — Single-supply operation at 3.3 V nominal (3.0 V to 3.6 V range) with LVTTL-compatible inputs and outputs as described in the datasheet.
  • Package and Temperature — 54-ball VFBGA (8×8 mm) package; commercial operating temperature range of 0°C to +70°C (TA).
  • SDR Compliance and Options — Datasheet lists PC100- and PC133-compliant options and programmable burst lengths of 1, 2, 4, 8 or full page.

Typical Applications

  • PC100/PC133 memory subsystems — Suitable for systems targeting PC100/PC133-compliant SDRAM implementations at the listed speed grades.
  • Parallel-memory embedded designs — Used where a parallel SDRAM interface and 3.3 V supply are required.
  • Board-level DRAM expansion — Compact VFBGA package provides a small-footprint option for adding SDRAM capacity on circuit boards.

Unique Advantages

  • Proven SDRAM architecture: Fully synchronous, pipelined operation with internal banks for predictable burst and column behavior.
  • Speed-grade clarity: –6A speed grade with 167 MHz clock frequency and 3-3-3 timing targets documented in the datasheet for design planning.
  • Compact package: 54-ball VFBGA (8×8 mm) package minimizes PCB area while providing a parallel memory interface.
  • Single-supply operation: 3.0 V to 3.6 V supply range (3.3 V nominal) aligns with common system power rails.
  • Refresh and low-power options: Supports 4K refresh cycles and offers self-refresh modes described in the datasheet for power management.
  • Commercial temperature rating: Rated for 0°C to +70°C operational environments.

Why Choose IC DRAM 64MBIT PAR 54VFBGA?

The MT48LC4M16A2B4-6A:J delivers a standardized SDR SDRAM solution in a compact VFBGA package for systems that require a 4M × 16, 64 Mbit parallel DRAM with clear timing and voltage specifications. Its documented 167 MHz speed grade and SDRAM feature set (programmable burst lengths, auto precharge, auto refresh and self-refresh options) make it suitable for designs that rely on synchronous, pipelined memory operation.

This device is best suited for designers and procurement teams needing a 3.3 V SDRAM component with a small PCB footprint and established timing parameters, supporting straightforward integration into parallel-memory subsystems within the specified commercial temperature range.

Request a quote or submit a pricing inquiry to receive part availability and lead-time information for the MT48LC4M16A2B4-6A:J.

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