MT48LC32M8A2TG-7E:D TR
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 619 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC32M8A2TG-7E:D TR – IC DRAM 256Mbit PAR 54TSOP II
The MT48LC32M8A2TG-7E:D TR is a 256 Mbit SDRAM device organized as 32M × 8 with a parallel memory interface. It is a fully synchronous DRAM designed for PC100- and PC133-compliant systems and supports a single 3.3 V ±0.3 V supply.
This device targets board-level designs that require standard SDRAM features such as internal bank architecture, programmable burst lengths, and structured refresh operation, supplied in a 54-pin TSOP II package for surface-mount mounting.
Key Features
- Core / Architecture Fully synchronous SDR SDRAM with internal, pipelined operation and internal banks to hide row access and precharge operations.
- Memory Organization & Capacity 256 Mbit total capacity organized as 32M × 8 with 4 internal banks (device architecture and configuration per datasheet).
- Performance / Timing Rated for 133 MHz clock frequency with an access time of 5.4 ns and a write cycle time (word/page) of 14 ns. The -7E speed grade targets 133 MHz timing.
- Refresh & Burst Control Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge and auto refresh support, and 64 ms / 8192-cycle refresh timing for commercial operation.
- Power Single-supply operation at 3.0 V to 3.6 V (3.3 V ±0.3 V specified in datasheet).
- Interface Parallel memory interface with LVTTL-compatible inputs and outputs; all signals registered on the positive edge of the system clock.
- Package & Mounting 54-pin TSOP II plastic package (0.400" / 10.16 mm width) designed for surface-mount assembly.
- Operating Temperature Commercial operating range: 0°C to +70°C (TA).
Typical Applications
- PC100/PC133 memory subsystems Use where PC100- and PC133-compliant SDRAM timing and behavior are required.
- Board-level embedded memory 256 Mbit density and parallel SDRAM interface for designs that require standard synchronous DRAM storage at 3.3 V.
- Compact SMD designs 54-pin TSOP II package for applications needing a surface-mount SDRAM package with a 10.16 mm body width.
Unique Advantages
- PC100/PC133 compatibility: Documented compliance with PC100 and PC133 timing classes simplifies integration into systems designed to those standards.
- Flexible burst and bank architecture: Programmable burst lengths and internal banks enable efficient, pipelined memory access and column-address changes every clock cycle.
- Standard 3.3 V supply: Operates from 3.0 V to 3.6 V, aligning with common DDR/SDR power domains and simplifying power-rail design.
- Commercial temperature grade: Specified for 0°C to +70°C operation for designs targeting commercial environments.
- Compact surface-mount package: 54-pin TSOP II (0.400", 10.16 mm) package offers a board-friendly footprint for high-density layouts.
Why Choose IC DRAM 256MBIT PAR 54TSOP II?
The MT48LC32M8A2TG-7E:D TR provides a standardized SDRAM solution with documented PC100/PC133 compatibility, a 256 Mbit density in a 32M × 8 organization, and the timing characteristics needed for synchronous, pipelined memory operation. Its single 3.3 V supply, programmable burst modes, and internal bank architecture make it suitable for designs requiring conventional SDRAM behavior in a compact TSOP II package.
This device is appropriate for engineers and procurement teams designing commercial-temperature embedded systems or memory subsystems that require a straightforward, compliant SDRAM component backed by datasheet-specified timing, refresh, and package information.
Request a quote or submit a pricing and availability inquiry for MT48LC32M8A2TG-7E:D TR to receive detailed lead-time and ordering information.