MT48LC32M8A2TG-75 IT:D TR
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 565 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | N/A | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC32M8A2TG-75 IT:D TR – 32M × 8 SDRAM, 54‑TSOP II, 133 MHz
The MT48LC32M8A2TG-75 IT:D TR is a 256 Mbit synchronous DRAM device organized as 32M × 8 with a parallel memory interface in a 54‑pin TSOP II package. It implements SDR SDRAM architecture with fully synchronous, pipelined operation and is offered by Micron Technology, Inc.
Designed for systems that require PC100/PC133‑compliant SDRAM behavior in a compact 54‑TSOP II footprint, the device provides programmable burst lengths, auto-refresh/self-refresh support, and timing options suitable for a range of temperature and voltage conditions.
Key Features
- Core / Technology SDR SDRAM, fully synchronous with all signals registered on the positive edge of the system clock and internal pipelined operation supporting column changes every clock cycle.
- Memory Organization 256 Mbit total capacity organized as 32M × 8 with four internal banks (8M × 8 × 4 banks).
- Clock and Timing Rated for 133 MHz clock frequency (‑75 speed grade). Typical access time listed as 5.4 ns; datasheet timing for the ‑75 grade targets 3‑3‑3 RCD‑RP‑CL with 20 ns RCD/RP/CL values.
- Burst and Refresh Programmable burst lengths of 1, 2, 4, 8 or full page. Supports auto precharge, concurrent auto precharge, auto refresh and self‑refresh (self‑refresh not available on AT devices). 64 ms / 8192‑cycle refresh for commercial and industrial ranges.
- Interface and I/O Parallel memory interface with LVTTL‑compatible inputs and outputs for straightforward integration with parallel SDRAM controllers.
- Power Single 3.3 V ±0.3 V supply (3.0 V to 3.6 V operating range).
- Package 54‑pin TSOP II (0.400" / 10.16 mm width) standard plastic TSOP II OCPL package.
- Operating Temperature Specified for −40°C to +85°C (TA), supporting industrial temperature operation.
Typical Applications
- PC100/PC133 memory subsystems — For systems and designs that require PC100/PC133‑compliant SDRAM timing and behavior.
- Embedded systems — Provides 256 Mbit of volatile SDRAM in a compact 54‑TSOP II footprint for embedded platforms with parallel SDRAM interfaces.
- Industrial equipment — Suitable for applications that require operation across an industrial temperature range (−40°C to +85°C).
- Legacy/upgrade designs — Drop‑in memory for designs expecting standard SDR SDRAM organization and parallel interface.
Unique Advantages
- PC100/PC133 timing compatibility: Built to PC100 and PC133 timing grades (‑75 speed grade at 133 MHz), enabling straightforward use in systems designed to those specifications.
- Flexible burst and bank control: Programmable burst lengths and internal bank architecture allow efficient, pipelined data access and reduced row‑precharge overhead.
- Compact TSOP II packaging: 54‑pin TSOP II (400 mil, 10.16 mm) provides a small footprint option for space‑constrained boards.
- Wide single‑supply voltage range: Operates from 3.0 V to 3.6 V (3.3 V ±0.3 V), simplifying power‑rail design when 3.3 V is used.
- Industrial temperature rating: Specified −40°C to +85°C operation supports deployment in harsher environmental conditions.
- Manufacturer datasheet details: Micron‑documented timing, refresh, and feature set (including auto‑refresh and self‑refresh options) provide clear integration guidance.
Why Choose IC DRAM 256MBIT PAR 54TSOP II?
The IC DRAM 256MBIT PAR 54TSOP II (MT48LC32M8A2TG-75 IT:D TR) positions itself as a 256 Mbit synchronous DRAM solution offering PC100/PC133‑grade timing, a parallel interface, and a compact 54‑TSOP II package. Its combination of programmable burst lengths, internal bank architecture and documented timing options makes it suitable for designs that require predictable synchronous DRAM behavior and industrial temperature operation.
This device is appropriate for engineers and procurement teams specifying parallel SDRAM memory where footprint, supply voltage compatibility (3.0–3.6 V), and industrial temperature range are key considerations. Datasheet‑level timing and refresh details support reliable integration into systems that require PC100/PC133‑compliant SDRAM modules.
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