MT48LC32M8A2P-7E:G TR

The MT48LC32M8A2P-7E:G TR is a 256 Mbit synchronous DRAM (SDRAM) organized as 32M × 8 with a parallel memory interface in a 54-pin TSOP II package. It is a fully synchronous SDRAM device with a 133 MHz clock frequency, designed for systems requiring PC100/PC133‑class synchronous DRAM memory.

Key operating parameters include a 3.0 V to 3.6 V supply range, commercial temperature operation from 0°C to 70°C, and package options optimized for compact board-level memory implementations.

Key Features

• Core / Architecture  SDR SDRAM, fully synchronous with all signals registered on the positive edge of the system clock; internal pipelined operation with internal banks to hide row access/precharge.
• Memory Organization & Capacity  256 Mbit capacity arranged as 32M × 8 with 4 internal banks.
• Performance & Timing  133 MHz clock frequency (PC133 class); speed grade -7E (target RCD-RP-CL timing 2-2-2 per datasheet timing table). Access time listed as 5.4 ns and a write cycle time (word/page) of 14 ns in the product specifications.
• Burst & Refresh  Programmable burst lengths (1, 2, 4, 8, or full page); supports auto refresh and a 64 ms/8192‑cycle refresh scheme as described in the datasheet.
• I/O Compatibility  LVTTL‑compatible inputs and outputs for standard parallel SDRAM interfacing.
• Power  Single supply operation from 3.0 V to 3.6 V.
• Package  54‑pin TSOP II (0.400", 10.16 mm width) plastic package optimized for board-level mounting.
• Operating Conditions  Commercial temperature range: 0°C to +70°C.

Typical Applications

• PC100/PC133 memory subsystems  Use as a synchronous DRAM component in PC100/PC133‑class memory designs requiring 256 Mbit density.
• Embedded systems  Parallel SDRAM for embedded designs that need synchronous burst access and standard LVTTL I/O.
• Board‑level memory expansion  Compact 54‑TSOP II package enables higher density memory population on space‑constrained PCBs.

Unique Advantages

• High density 256 Mbit capacity: Provides 32M × 8 organization to support larger memory footprints without multiple devices.
• PC133‑class synchronous operation: 133 MHz clock support and -7E timing make the device suitable for systems targeting PC100/PC133 SDRAM timing profiles.
• Flexible burst and bank architecture: Programmable burst lengths and internal banks enable efficient pipelined access and reduced row‑to‑row latency.
• Standard 3.3 V supply: Operates from 3.0 V to 3.6 V simplifying power design for systems using common 3.3 V rails.
• Compact TSOP II package: 54‑pin, 0.400" (10.16 mm) TSOP II package supports compact board layouts and surface‑mount assembly.
• Standard LVTTL I/O: Compatible inputs and outputs for straightforward integration with parallel SDRAM controllers.

Why Choose MT48LC32M8A2P-7E:G TR?

The MT48LC32M8A2P-7E:G TR delivers a 256 Mbit SDRAM building block with PC133‑class synchronous operation, internal pipelining and banks, and programmable burst modes—making it suitable for applications that require standard parallel SDRAM memory at this density and timing. Its 54‑pin TSOP II package and 3.0 V–3.6 V supply range enable compact, board‑level memory implementations within commercial temperature constraints.

This device is well suited for designers needing a verified 32M × 8 SDRAM part with documented timing options and refresh behavior as provided in the product datasheet.

Request a quote or contact sales to check availability and obtain pricing or to discuss volume requirements and lead times for the MT48LC32M8A2P-7E:G TR.