MT48LC32M8A2P-7E:D TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 1,350 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT48LC32M8A2P-7E:D TR – IC DRAM 256MBIT PAR 54TSOP II

The MT48LC32M8A2P-7E:D TR is a 256 Mbit SDRAM organized as 32M × 8 with a parallel memory interface in a 54-pin TSOP II package. It implements fully synchronous SDRAM architecture with internal pipelined operation and internal bank management for high-efficiency row/column access.

Designed for commercial applications, the device is PC100- and PC133-compliant and operates over a 3.0 V to 3.6 V supply range with a commercial temperature rating of 0°C to 70°C, making it suitable for synchronous system memory in a variety of embedded and computing platforms.

Key Features

  • Core / Memory Architecture 256 Mbit SDRAM organized as 32M × 8 with four internal banks to improve throughput and hide row access/precharge.
  • Synchronous, Pipelined Operation Fully synchronous design with all signals registered on the positive edge of the system clock and internal pipelining to allow column address changes every clock cycle.
  • Performance & Timing PC100- and PC133-compliant with a clock frequency up to 133 MHz; access time and timing options include the -7E speed grade (133 MHz, 2-2-2 timing) and an access time listed at 5.4 ns in product data.
  • Burst & Refresh Modes Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, auto refresh and self-refresh mode options indicated in the product documentation.
  • Interface & I/O Parallel memory interface with LVTTL-compatible inputs and outputs for synchronous system integration.
  • Power Single-supply operation at 3.3 V nominal (3.0 V to 3.6 V specified).
  • Package & Temperature 54-pin TSOP II (0.400", 10.16 mm width) package; commercial operating temperature range 0°C to 70°C.
  • Write Timing Write cycle timing includes a word/page write cycle time of 14 ns as specified in the product data.

Typical Applications

  • PC100/PC133 Synchronous Systems Use as system memory in platforms requiring PC100 or PC133-compliant SDRAM.
  • Embedded Commercial Electronics Integration into commercial embedded designs that require a 256 Mbit synchronous DRAM in a 54-pin TSOP II footprint.
  • Legacy and Replacement Modules Ideal for designs or repairs where a 54-pin TSOP II SDRAM footprint and 32M × 8 organization are required.

Unique Advantages

  • Synchronous, predictable timing: Fully synchronous operation with registered inputs on the clock edge simplifies timing analysis and integration into synchronous systems.
  • Flexible burst operation: Programmable burst lengths (1, 2, 4, 8, full page) enable tuning of transfer granularity for different system throughput needs.
  • Compact TSOP II package: 54-pin TSOP II (0.400", 10.16 mm) provides a compact footprint compatible with designs requiring a standardized surface-mount memory package.
  • Commercial temperature rating: Specified operation from 0°C to 70°C to match commercial embedded system environments.
  • Standard 3.3 V supply: Operates from 3.0 V to 3.6 V, aligning with common 3.3 V system power rails.
  • Documented timing grades: Speed-grade information (–7E) and timing tables are provided in the product documentation to support system timing validation.

Why Choose MT48LC32M8A2P-7E:D TR?

The MT48LC32M8A2P-7E:D TR delivers a well-documented, synchronous 256 Mbit DRAM option in a 54-pin TSOP II package for commercial embedded and computing designs. Its PC100/PC133 compliance, internal bank architecture, and programmable burst capabilities make it suitable for systems that require predictable synchronous memory behavior and straightforward integration.

Backed by Micron product documentation and family-level specifications, this device is appropriate for engineers and procurement teams seeking a documented SDRAM solution with defined timing grades, standard 3.3 V operation, and a compact TSOP II footprint.

Request a quote or submit an RFQ to receive pricing and availability information for the MT48LC32M8A2P-7E:D TR.

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