MT48LC32M8A2P-75:D TR

The MT48LC32M8A2P-75:D TR is a 256 Mbit synchronous DRAM (SDRAM) organized as 32M × 8 with a parallel memory interface in a 54-pin TSOP II package. This device implements fully synchronous, pipelined SDRAM architecture with internal bank management and programmable burst capabilities for system memory applications requiring standard PC100/PC133 timing.

Designed for commercial temperature operation and a 3.3 V power domain, the part targets equipment and designs that need a compact 54-TSOP (400 mil / 10.16 mm) packaged SDRAM device with PC100/PC133-compliant timing and standard SDRAM feature set.

Key Features

• Core / Architecture  Fully synchronous SDR SDRAM with internal, pipelined operation and four internal banks to optimize row access and precharge behavior.
• Memory Organization & Capacity  256 Mbit capacity organized as 32M × 8, offering a parallel DRAM memory interface suitable for standard SDRAM systems.
• Performance & Timing  Clock frequency rated at 133 MHz (−75 speed grade) with an access time of 5.4 ns and target timing RCD-RP-CL = 3-3-3 for the −75 grade.
• Burst & Refresh  Programmable burst lengths (1, 2, 4, 8, or full page) plus auto precharge, auto refresh and self-refresh modes; 8K refresh cycle support documented in datasheet.
• Power  Single-supply operation at 3.0 V to 3.6 V (nominal 3.3 V ±0.3 V) for standard system power rails.
• Package & Temperature  54-pin TSOP II (400 mil / 10.16 mm width) plastic package; commercial operating temperature range 0°C to +70°C.
• Standards Compliance  PC100- and PC133-compliant timing and LVTTL-compatible inputs/outputs as documented for the device family.

Typical Applications

• PC100/PC133 memory subsystems  Use as synchronous DRAM on systems designed to PC100/PC133 timing profiles.
• Embedded systems (commercial temperature)  Provides 256 Mbit SDRAM in a compact 54-TSOP II package for commercial embedded designs operating within 0°C to +70°C.
• Legacy equipment repair and upgrades  Compatible form-factor and timing for replacement/repair in designs using 54-pin TSOP II SDRAM components.

Unique Advantages

• Synchronous pipelined architecture: Internal pipelined operation and four internal banks help maintain throughput by allowing column address changes every clock cycle.
• Flexible burst control: Programmable burst lengths (including full page) enable tuning for sequential and random access patterns.
• PC100/PC133 timing support: Documented compliance with PC100 and PC133 timing makes integration into standard synchronous memory subsystems straightforward.
• Compact industry-standard package: 54-TSOP II (400 mil) package provides a compact footprint for board designs requiring a low-profile parallel SDRAM solution.
• Standard 3.3 V supply: Operates from 3.0 V to 3.6 V, matching common system power rails and simplifying power management.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The MT48LC32M8A2P-75:D TR delivers a documented PC100/PC133-compliant SDRAM building block with 256 Mbit density in a 54-pin TSOP II package. Its synchronous, pipelined design with internal banks and programmable burst lengths provides predictable timing and flexibility for designs that require standard SDRAM behavior at 133 MHz.

This device is well suited to commercial-temperature systems and board designs that need a compact parallel SDRAM solution running from a 3.3 V supply. The combination of family features—including auto-refresh and self-refresh modes, and established timing grades—makes it a practical choice for system memory implementations and legacy form-factor replacements.

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