MT48LC32M8A2P-75 IT:D TR

The MT48LC32M8A2P-75 IT:D TR is a 256 Mbit synchronous DRAM (SDRAM) device organized as 32M × 8 with a parallel memory interface. It implements a fully synchronous architecture with internal banks and programmable burst operation for systems that require standard PC100/PC133 timing and parallel DRAM integration.

Packaged in a 54‑pin TSOP II (0.400", 10.16 mm width), this 3.3 V ±0.3 V SDRAM variant targets designs needing 256 Mbit of volatile memory in a compact surface-mount footprint and supports industrial temperature operation.

Key Features

• Memory Type & Architecture — SDRAM, volatile memory organized as 32M × 8 (256 Mbit) with internal bank architecture to improve row/column access efficiency.
• Performance — 133 MHz clock frequency (speed grade -75) with an access time listed as 5.4 ns; supports CAS latency and timing options defined for PC100/PC133 operation.
• Programmable Burst & Banking — Internal, pipelined operation with programmable burst lengths (1, 2, 4, 8, or full page) and multiple internal banks for overlapping row access and precharge.
• Refresh & Power Modes — Supports auto refresh and self refresh modes (note: self refresh not available on AT devices) and standard refresh sequences (8192 cycles as specified in the datasheet options).
• Interface & I/O — Parallel memory interface with LVTTL‑compatible inputs and outputs suitable for synchronous bus environments.
• Timing & Write Recovery — Write cycle time (word/page) of 15 ns and timing options provided for RCD/RP/CL in the documented speed grades.
• Power Supply — Single-supply operation at 3.0 V to 3.6 V (typical 3.3 V ±0.3 V).
• Package & Mounting — 54-pin TSOP II (0.400", 10.16 mm width) plastic package for surface-mount board assemblies.
• Operating Temperature — Industrial temperature range: -40 °C to +85 °C (TA).

Typical Applications

• PC100/PC133 memory systems — Use in systems requiring PC100 or PC133 timing compliance and synchronous parallel DRAM operation.
• Board-level DRAM expansion — Provides 256 Mbit of volatile storage in a compact 54‑TSOP II package for board-mounted memory requirements.
• Industrial equipment — Industrial temperature rating (-40 °C to +85 °C) makes this device suitable for applications exposed to extended temperature ranges.

Unique Advantages

• Industry-standard timing compatibility: PC100/PC133 compliance and documented speed grades streamline integration into legacy synchronous memory platforms.
• Flexible burst operation: Programmable burst lengths and internal banking allow designers to optimize throughput for different access patterns.
• Compact surface-mount package: The 54‑pin TSOP II (0.400") package delivers 256 Mbit density in a small board footprint for space-constrained designs.
• Industrial temperature support: Rated for -40 °C to +85 °C, enabling deployment in environments with broader thermal requirements.
• Standard 3.3 V supply: Operates from 3.0 V to 3.6 V, matching common system power rails for straightforward power integration.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The MT48LC32M8A2P-75 IT:D TR balances synchronous SDRAM performance with a compact 54‑pin TSOP II package, offering 256 Mbit of parallel DRAM capacity for systems requiring PC100/PC133 timing. Its combination of programmable burst modes, internal banks, and industrial temperature rating makes it appropriate for board-level memory expansion in systems that need proven SDRAM timing and behavior.

Manufactured by Micron Technology Inc., this device provides a factory-specified set of timing, power, package, and temperature characteristics to support reliable integration and long-term deployment in compatible designs.

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