MT48LC32M8A2P-6A:G

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 597 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page12 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT48LC32M8A2P-6A:G – 256 Mbit SDR SDRAM, 54-pin TSOP II

The MT48LC32M8A2P-6A:G is a 256 Mbit synchronous DRAM device in a 54-pin TSOP II package from Micron Technology Inc. It implements SDR SDRAM architecture with a 32M × 8 memory organization and internal bank structure for pipelined operation.

Designed for systems requiring a parallel SDRAM interface, the device offers high-speed operation (up to 167 MHz speed grade -6A), fast access characteristics, and standard 3.0–3.6 V supply operation, making it suitable for compact, board-mounted memory applications operating in commercial temperature ranges.

Key Features

  • Core and Architecture Fully synchronous SDR SDRAM; all signals registered on the positive edge of the system clock. Internal, pipelined operation with multiple internal banks to hide row access/precharge latency.
  • Memory Organization 256 Mbit capacity organized as 32M × 8 with internal bank architecture (four banks).
  • Timing and Performance Speed grade -6A targets a 167 MHz clock frequency with an access time of 5.4 ns. CAS latency options and timing parameters are provided for matching system timing budgets.
  • Burst and Refresh Programmable burst lengths (1, 2, 4, 8, or full page). Supports auto precharge, auto refresh and commercial 64 ms / 8192-cycle refresh requirements.
  • Power Single-supply operation specified at 3.0 V to 3.6 V.
  • Package and Mounting 54-pin TSOP II (0.400" / 10.16 mm width) plastic package intended for board-level mounting.
  • Operating Temperature Commercial grade operation: 0°C to +70°C (TA).

Unique Advantages

  • Synchronous, pipelined architecture: Enables column address changes every clock cycle and reduces effective read/write latency through internal bank management.
  • High-speed operation: 167 MHz speed grade and 5.4 ns access time provide capability for time-sensitive parallel memory tasks.
  • Flexible data transfer modes: Programmable burst lengths and auto precharge/refresh modes simplify controller integration and memory flow control.
  • Compact TSOP II footprint: 54-pin TSOP II package (10.16 mm width) minimizes board area while providing a standard mounting option.
  • Standard 3.3 V power domain: 3.0–3.6 V supply range aligns with common system power rails for simplified power design.
  • Commercial temperature rating: Specified 0°C to +70°C operation for general-purpose, board-level memory applications.

Why Choose MT48LC32M8A2P-6A:G?

The MT48LC32M8A2P-6A:G from Micron provides a synchronous, pipelined SDRAM solution that balances high-speed timing (167 MHz / 5.4 ns access) with a compact 54-pin TSOP II package and standard 3.0–3.6 V operation. Its programmable burst modes, internal bank architecture and standard refresh features make it well suited for designs that require parallel SDRAM memory with predictable timing and refresh behavior.

This device is appropriate for commercial-temperature board-level designs that need a 256 Mbit SDRAM in a space-efficient package and where Micron's SDRAM feature set (synchronous operation, burst control, auto refresh) is required to meet system memory timing and control requirements.

Request a quote or submit a sales inquiry to obtain pricing, availability, and ordering information for the MT48LC32M8A2P-6A:G.

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