MT48LC32M8A2P-6A:G TR
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,750 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 12 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC32M8A2P-6A:G TR – IC DRAM 256Mbit Parallel SDRAM, 54‑TSOP II
The MT48LC32M8A2P-6A:G TR is a 256 Mbit parallel SDRAM organized as 32M × 8 in a 54‑pin TSOP II package. It is a fully synchronous, pipelined DRAM device intended for system memory implementations that require a parallel SDRAM interface and predictable timing.
Key value propositions include high-frequency operation (167 MHz speed grade), standard 3.3 V supply compatibility, and a compact 54‑TSOP II package suitable for board-level integration where parallel SDRAM is required.
Key Features
- Core / Architecture SDR SDRAM, fully synchronous with all signals registered on the positive edge of the system clock and internal pipelined operation enabling column address changes every clock cycle.
- Memory Organization 32M × 8 organization providing 256 Mbit total capacity with four internal banks for improved row access and precharge handling.
- Performance 167 MHz clock frequency for the -6A speed grade; specified access time of 5.4 ns and target RCD‑RP‑CL = 3‑3‑3 timing for the -6A grade.
- Burst and Command Flexibility Programmable burst lengths (1, 2, 4, 8, or full page) with auto precharge and auto refresh options; supports concurrent auto precharge and auto refresh modes.
- Refresh and Reliability 8K refresh cycles with a 64 ms / 8192-cycle refresh interval for commercial-grade operation.
- I/O and Power LVTTL-compatible inputs and outputs and single 3.3 V ±0.3 V power supply (listed voltage range 3.0 V to 3.6 V).
- Package and Thermal 54‑pin TSOP II (0.400", 10.16 mm width) plastic package; commercial operating temperature range 0 °C to +70 °C.
- Standards PC100- and PC133-compliant as indicated in the product datasheet.
- Options and Modes Self-refresh available (note: not available on AT devices) and write-recovery timing options listed for product variants in the datasheet.
Typical Applications
- Parallel memory systems Use where a 256 Mbit parallel SDRAM module is required for system memory buffering and low-latency access.
- Board‑level DRAM integration Suitable for designs needing an organized 32M × 8 SDRAM device in a compact 54‑TSOP II footprint.
- Programmable burst and buffering Applications that leverage programmable burst lengths and pipelined access for burst transfers and frame or buffer storage.
Unique Advantages
- High-frequency operation: The -6A speed grade supports a 167 MHz clock frequency with 3‑3‑3 timing, enabling faster cycle rates compared with lower speed grades.
- Flexible data bursts: Programmable burst lengths (1, 2, 4, 8, full page) allow tuning of data transfer patterns to match system access behavior.
- Standard 3.3 V supply: Single 3.3 V ±0.3 V supply compatibility simplifies power-rail integration on legacy 3.3 V designs; specified voltage range 3.0 V–3.6 V.
- Compact TSOP II packaging: 54‑pin TSOP II (0.400", 10.16 mm) provides a board-level, low-profile package for space-conscious designs.
- Synchronous, pipelined architecture: Positive-edge clocked operation and internal pipelining improve deterministic timing and throughput for column accesses.
- Commercial-grade refresh timing: 8K refresh cycles with a 64 ms refresh interval documented for commercial operation, aligning with standard SDRAM refresh schemes.
Why Choose IC DRAM 256MBIT PAR 54TSOP II?
The MT48LC32M8A2P-6A:G TR balances high-frequency SDRAM performance with a compact 54‑TSOP II package, offering designers a 256 Mbit parallel memory option with predictable timing and flexible burst behavior. Its synchronous, pipelined architecture and LVTTL-compatible I/O make it suitable for board-level memory integration where parallel SDRAM is required.
This device is appropriate for developers and procurement teams seeking a documented, commercial‑grade 32M × 8 SDRAM component with 167 MHz operation, standard voltage compatibility, and a small-footprint package for system memory, buffering, or burst-transfer applications.
Request a quote or submit an inquiry to obtain pricing, lead times, and availability for the MT48LC32M8A2P-6A:G TR.