MT48LC32M8A2P-6A:G TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 1,750 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page12 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT48LC32M8A2P-6A:G TR – IC DRAM 256Mbit Parallel SDRAM, 54‑TSOP II

The MT48LC32M8A2P-6A:G TR is a 256 Mbit parallel SDRAM organized as 32M × 8 in a 54‑pin TSOP II package. It is a fully synchronous, pipelined DRAM device intended for system memory implementations that require a parallel SDRAM interface and predictable timing.

Key value propositions include high-frequency operation (167 MHz speed grade), standard 3.3 V supply compatibility, and a compact 54‑TSOP II package suitable for board-level integration where parallel SDRAM is required.

Key Features

  • Core / Architecture  SDR SDRAM, fully synchronous with all signals registered on the positive edge of the system clock and internal pipelined operation enabling column address changes every clock cycle.
  • Memory Organization  32M × 8 organization providing 256 Mbit total capacity with four internal banks for improved row access and precharge handling.
  • Performance  167 MHz clock frequency for the -6A speed grade; specified access time of 5.4 ns and target RCD‑RP‑CL = 3‑3‑3 timing for the -6A grade.
  • Burst and Command Flexibility  Programmable burst lengths (1, 2, 4, 8, or full page) with auto precharge and auto refresh options; supports concurrent auto precharge and auto refresh modes.
  • Refresh and Reliability  8K refresh cycles with a 64 ms / 8192-cycle refresh interval for commercial-grade operation.
  • I/O and Power  LVTTL-compatible inputs and outputs and single 3.3 V ±0.3 V power supply (listed voltage range 3.0 V to 3.6 V).
  • Package and Thermal  54‑pin TSOP II (0.400", 10.16 mm width) plastic package; commercial operating temperature range 0 °C to +70 °C.
  • Standards  PC100- and PC133-compliant as indicated in the product datasheet.
  • Options and Modes  Self-refresh available (note: not available on AT devices) and write-recovery timing options listed for product variants in the datasheet.

Typical Applications

  • Parallel memory systems  Use where a 256 Mbit parallel SDRAM module is required for system memory buffering and low-latency access.
  • Board‑level DRAM integration  Suitable for designs needing an organized 32M × 8 SDRAM device in a compact 54‑TSOP II footprint.
  • Programmable burst and buffering  Applications that leverage programmable burst lengths and pipelined access for burst transfers and frame or buffer storage.

Unique Advantages

  • High-frequency operation: The -6A speed grade supports a 167 MHz clock frequency with 3‑3‑3 timing, enabling faster cycle rates compared with lower speed grades.
  • Flexible data bursts: Programmable burst lengths (1, 2, 4, 8, full page) allow tuning of data transfer patterns to match system access behavior.
  • Standard 3.3 V supply: Single 3.3 V ±0.3 V supply compatibility simplifies power-rail integration on legacy 3.3 V designs; specified voltage range 3.0 V–3.6 V.
  • Compact TSOP II packaging: 54‑pin TSOP II (0.400", 10.16 mm) provides a board-level, low-profile package for space-conscious designs.
  • Synchronous, pipelined architecture: Positive-edge clocked operation and internal pipelining improve deterministic timing and throughput for column accesses.
  • Commercial-grade refresh timing: 8K refresh cycles with a 64 ms refresh interval documented for commercial operation, aligning with standard SDRAM refresh schemes.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The MT48LC32M8A2P-6A:G TR balances high-frequency SDRAM performance with a compact 54‑TSOP II package, offering designers a 256 Mbit parallel memory option with predictable timing and flexible burst behavior. Its synchronous, pipelined architecture and LVTTL-compatible I/O make it suitable for board-level memory integration where parallel SDRAM is required.

This device is appropriate for developers and procurement teams seeking a documented, commercial‑grade 32M × 8 SDRAM component with 167 MHz operation, standard voltage compatibility, and a small-footprint package for system memory, buffering, or burst-transfer applications.

Request a quote or submit an inquiry to obtain pricing, lead times, and availability for the MT48LC32M8A2P-6A:G TR.

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