MT48LC32M8A2P-75 L:D

The MT48LC32M8A2P-75 L:D is a 256 Mbit synchronous DRAM organized as 32M × 8 with a parallel memory interface in a 54-pin TSOP II (0.400", 10.16 mm width) package. It is a fully synchronous SDRAM device designed for PC100/PC133-compliant systems with a 133 MHz clock frequency and single 3.3 V-class supply (3.0 V to 3.6 V).

This device targets board-level memory implementations that require programmable burst operation, internal banked architecture for row management, and commercial temperature operation (0°C to +70°C).

Key Features

• Memory Architecture  32M × 8 organization providing 256 Mbit capacity with 4 internal banks for improved row access and precharge management.
• SDR SDRAM Core  Fully synchronous SDRAM with all signals registered on the positive edge of the system clock and internal pipelined operation that allows column address changes every clock cycle.
• Performance  PC100- and PC133-compliant timing, 133 MHz clock frequency (speed grade -75), and specified access and cycle timings (Access time: 5.4 ns; write cycle time, word/page: 15 ns).
• Programmable Burst & Refresh  Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, auto refresh and self-refresh modes (self-refresh noted as not available on AT devices in the datasheet).
• Power Supply  Single-supply operation from 3.0 V to 3.6 V (3.3 V ±0.3 V as specified in the datasheet).
• Package & Mounting  54-pin TSOP II (400 mil) plastic package for board-level mounting and compact footprint.
• Timing & Latency Options  Supported timing grades include CL and cycle-time options per datasheet (e.g., -75 grade with 3-3-3 RCD-RP-CL targets and CL = 20 ns).

Typical Applications

• PC100/PC133-compliant memory subsystems  Use as a synchronous DRAM device in designs targeting PC100 or PC133 timing requirements.
• Board-level parallel DRAM implementations  Suitable for systems requiring a 32M × 8 parallel memory device in a 54-pin TSOP II footprint.
• Systems requiring burstable SDRAM  Where programmable burst lengths and pipelined column operation are needed to manage sequential data transfers.

Unique Advantages

• Synchronous, pipelined operation: Reduces timing complexity by registering signals on the clock edge and allowing column address changes every clock cycle.
• Banked internal architecture: Four internal banks help hide row access and precharge, improving effective throughput for random row accesses.
• Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) let designers optimize transfers for bus utilization and system requirements.
• Commercial temperature rating: Specified for 0°C to +70°C operation, matching standard commercial-board-level deployments.
• Standard 3.3 V-class supply: Operates from 3.0 V to 3.6 V, simplifying power design in 3.3 V systems.
• Compact TSOP II package: 54-pin (0.400", 10.16 mm) TSOP II package enables dense board-level placement while maintaining standard pinout options.

Why Choose MT48LC32M8A2P-75 L:D?

The MT48LC32M8A2P-75 L:D provides a compact, board-ready 256 Mbit SDRAM solution with PC100/PC133 timing support, banked architecture, and programmable burst modes. Its 54-pin TSOP II package and single 3.3 V-class supply make it straightforward to integrate into existing 3.3 V system designs that require synchronous, parallel DRAM.

This device is suited for designers seeking a verified Micron SDRAM component offering defined timing grades, commercial temperature operation, and on-die features such as auto refresh and self-refresh (as noted in the datasheet). It delivers predictable electrical and timing characteristics for system memory implementations that match the provided specifications.

Request a quote or contact sales to obtain pricing and availability for the MT48LC32M8A2P-75 L:D and to discuss quantity, lead time, or additional technical questions.