MT48LC32M8A2P-7E:G

The MT48LC32M8A2P-7E:G is a 256 Mbit synchronous DRAM device organized as 32M × 8 with a parallel memory interface in a 54-pin TSOP II package. It implements fully synchronous, pipelined SDRAM architecture with internal banks and support for standard SDRAM control features.

This device targets systems that require PC100/PC133-class SDRAM operation at 133 MHz with a single 3.0–3.6 V supply and an operating temperature range of 0°C to 70°C, offering predictable timing and board-level integration in a compact TSOP footprint.

Key Features

• Core / Memory Architecture  256 Mbit density organized as 32M × 8 with internal 4-bank architecture (8 Meg × 8 × 4 banks as listed in the datasheet).
• Performance  Clock frequency 133 MHz (PC133-class). The -7E speed grade targets 133 MHz with 2-2-2 timing (CL) as noted in the datasheet; an access time of 5.4 ns is specified in the product data.
• Synchronous SDRAM Features  Fully synchronous operation with internal pipelining, programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, auto refresh and documented self-refresh mode in the datasheet.
• Interface & I/O  Parallel SDRAM interface with LVTTL-compatible inputs and outputs; all signals registered on the positive edge of the system clock per datasheet details.
• Package & Mounting  54-pin TSOP II (0.400", 10.16 mm width) plastic package for surface-mount board-level integration.
• Power & Temperature  Single-supply operation specified at 3.0 V to 3.6 V (3.3 V ±0.3 V) with an operating temperature range of 0°C to 70°C (TA).
• Timing & Refresh  Supports standard SDRAM refresh schemes (8192-cycle refresh) and timing options documented for commercial speed grades in the datasheet.

Typical Applications

• PC100/PC133-class memory subsystems  For designs requiring SDRAM devices specified for 133 MHz operation and documented timing grades.
• Embedded board-level memory  Compact 54-pin TSOP II package suits space-constrained PCBs needing moderate-density DRAM.
• High-speed buffering and working memory  Programmable burst lengths, internal banks and pipelined operation support bursty access patterns and buffering tasks.

Unique Advantages

• Defined speed-grade timing: The -7E grade provides documented 2-2-2 timing targets at 133 MHz, enabling deterministic system timing design.
• Synchronous, pipelined architecture: Fully synchronous operation and internal pipelining allow column address changes every clock cycle as specified in the datasheet.
• Flexible access controls: Programmable burst lengths, auto precharge and auto refresh modes give designers control over access patterns and refresh behavior.
• Compact, industry-standard package: The 54-TSOP II (0.400", 10.16 mm) package provides a standard surface-mount form factor for board-level memory integration.
• Standard 3.3 V supply: Operation from 3.0 V to 3.6 V matches common 3.3 V system rails and simplifies power design.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

MT48LC32M8A2P-7E:G combines a 256 Mbit SDRAM organization with PC100/PC133-class timing, documented speed-grade parameters, and standard SDRAM control features. Its 54-pin TSOP II package and 3.0–3.6 V supply make it suitable for board-level memory expansion where defined timing, compact footprint, and synchronous operation are required.

This device is appropriate for designers specifying commercial-temperature SDRAM devices with clear timing and refresh characteristics, and for applications that benefit from programmable bursts, internal banks, and pipelined access as described in the product documentation.

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