MT48LC32M8A2TG-75:D TR

The MT48LC32M8A2TG-75:D TR is a 256 Mbit SDR SDRAM organized as 32M × 8 with a parallel memory interface. It is a fully synchronous DRAM designed for PC100- and PC133-compliant systems and supports pipelined operation with internal bank management for improved access concurrency.

This device operates from a single 3.3 V supply (3.0 V to 3.6 V), targets commercial operating temperatures (0°C to +70°C), and is delivered in a 54-pin TSOP II (0.400", 10.16 mm width) package for board-level mounting.

Key Features

• Core Memory Architecture 32M × 8 organization with 4 internal banks enabling concurrent bank access and row-precharge hiding.
• SDR SDRAM Functionality Fully synchronous operation with all signals registered on the positive edge of the system clock; internal pipelined operation supports column address changes every clock cycle.
• Performance PC100- and PC133-compliant timing with a clock frequency of 133 MHz for the -75 speed grade and an access time specified at 5.4 ns.
• Programmable Burst and Refresh Programmable burst lengths (1, 2, 4, 8, or full page) plus auto refresh and self-refresh support; 8192-cycle refresh intervals documented.
• Power Single 3.3 V ±0.3 V supply (3.0 V to 3.6 V) for system compatibility with standard 3.3 V logic levels.
• Package and Mounting Supplied in a 54-pin TSOP II (400 mil) plastic package suitable for surface mounting and compact board layouts.
• System Interfaces LVTTL-compatible inputs and outputs with parallel memory interface and standard SDRAM control signals.
• Timing Options Available timing grades include -75 (133 MHz, 3-3-3) and other documented grades; write cycle time (word/page) specified at 15 ns.

Typical Applications

• PC100/PC133 Memory Subsystems Use as system SDRAM in designs requiring PC100- or PC133-compliant synchronous DRAM.
• Board-Level Memory Expansion Implement memory expansion where a 54-pin TSOP II footprint and 32M × 8 organization are required.
• Embedded Systems with 3.3 V Supply Suitable for embedded applications that operate from a 3.0 V–3.6 V supply and require synchronous parallel DRAM.

Unique Advantages

• PC100/PC133 Compliance: Documented compliance with PC100 and PC133 timing grades simplifies integration into systems targeting those standards.
• Flexible Burst Control: Programmable burst lengths (1, 2, 4, 8, full page) enable tuning of burst behavior to match system memory access patterns.
• Internal Bank Architecture: Four internal banks provide hardware-level concurrency for improved effective throughput on sequential and interleaved accesses.
• Standard 54-pin TSOP II Package: Industry-standard TSOP II packaging supports compact board layouts and established assembly flows.
• Single 3.3 V Supply: Operation from a single 3.3 V supply (3.0 V–3.6 V) aligns with common system power rails for straightforward power design.
• Auto and Self-Refresh Options: Built-in auto refresh and self-refresh modes (per device options) reduce system refresh management overhead.

Why Choose MT48LC32M8A2TG-75:D TR?

The MT48LC32M8A2TG-75:D TR delivers a compact, 256 Mbit SDR SDRAM solution with a 32M × 8 organization and PC100/PC133-compliant timing, packaged in a 54-pin TSOP II footprint. Its internal bank structure, programmable burst lengths, and standard 3.3 V operation make it suitable for designs that require synchronous parallel DRAM with predictable timing characteristics.

This device is targeted at designers needing a board-mountable SDRAM option within a commercial temperature range (0°C to +70°C), offering timing grade choices and documented refresh and timing parameters to support system-level memory design and validation.

Request a quote or submit a pricing inquiry to evaluate MT48LC32M8A2TG-75:D TR for your next design or production project.