MT48LC4M32B2TG-6:G TR

IC DRAM 128MBIT PAR 86TSOP II
Part Description

IC DRAM 128MBIT PAR 86TSOP II

Quantity 534 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.5 nsGradeCommercial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page12 nsPackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M32B2TG-6:G TR – IC DRAM 128MBIT PAR 86TSOP II

The MT48LC4M32B2TG-6:G TR is a 128 Mbit volatile SDRAM organized as 4M × 32 with a parallel memory interface. It is provided in an 86-TSOP II (86-TFSOP, 0.400", 10.16 mm width) package and is supplied by Micron Technology Inc.

Designed for board-level SDRAM implementations where a parallel DRAM interface and moderate clock rates are required, the device operates from a 3.0 V to 3.6 V supply and supports a clock frequency of 167 MHz with an access time of 5.5 ns.

Key Features

  • Core / Technology SDRAM volatile memory implemented in SDRAM technology for standard DRAM operation.
  • Memory Capacity & Organization 128 Mbit capacity organized as 4M × 32, providing parallel 32-bit data width.
  • Performance Supports a clock frequency of 167 MHz, an access time of 5.5 ns and a write cycle time (word page) of 12 ns.
  • Power Operates from a 3.0 V to 3.6 V supply voltage range.
  • Package & Mounting Available in an 86-TSOP II / 86-TFSOP package (0.400" / 10.16 mm width) suitable for board-level mounting.
  • Temperature Range Specified for operation from 0°C to 70°C (TA).
  • Memory Interface & Format Parallel DRAM interface and standard DRAM memory format.
  • Manufacturer Supplied by Micron Technology Inc.

Typical Applications

  • Parallel memory subsystems Use where a parallel 32-bit SDRAM interface is required for board-level memory.
  • Embedded system memory Provides DLL-free SDRAM capacity in designs that accept a 3.0 V–3.6 V supply and 86-TSOP II package footprints.
  • Legacy SDRAM designs Drop-in memory option for systems designed around standard SDRAM timing (5.5 ns access, 12 ns word page write cycle).

Unique Advantages

  • Clear capacity and organization: 128 Mbit arranged as 4M × 32 delivers a defined 32-bit parallel data path for predictable bus integration.
  • Specified timing performance: 167 MHz clock rate with 5.5 ns access time and 12 ns write cycle time supports deterministic timing budgets.
  • Wide supply compatibility: 3.0 V to 3.6 V supply range accommodates common 3 V system rails.
  • Industry-standard package: 86-TSOP II / 86-TFSOP package (0.400", 10.16 mm width) simplifies PCB footprint planning for board-level designs.
  • Defined operating temperature: 0°C to 70°C rating supports typical commercial temperature deployments.

Why Choose IC DRAM 128MBIT PAR 86TSOP II?

This Micron-supplied 128 Mbit SDRAM combines a 4M × 32 organization, parallel interface, and defined timing parameters to fit designs that require a straightforward DRAM memory module in an 86-TSOP II package. Its supply voltage range and commercial temperature rating make it suitable for mainstream board-level memory implementations.

The device is appropriate for engineers specifying deterministic SDRAM timing and a 32-bit parallel data path, offering clear electrical and mechanical characteristics for integration and procurement.

Request a quote or submit an RFQ to receive pricing and availability information for the MT48LC4M32B2TG-6:G TR.

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