MT48LC4M32B2P-7 IT:G TR

IC DRAM 128MBIT PAR 86TSOP II
Part Description

IC DRAM 128MBIT PAR 86TSOP II

Quantity 648 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.5 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page14 nsPackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC4M32B2P-7 IT:G TR – 128 Mbit SDRAM, 4M × 32, 86‑TSOP II

The MT48LC4M32B2P-7 IT:G TR is a 128 Mbit volatile SDRAM organized as 4M × 32 with a parallel memory interface. It is supplied in an 86‑TSOP II package and is specified for operation from -40°C to 85°C.

This device targets designs that require parallel DRAM capacity in a 86‑TSOP II footprint, providing defined clock, access, and write timing characteristics for integration into memory subsystems and board‑level implementations.

Key Features

  • Core / Memory SDRAM architecture, volatile memory with an organization of 4M × 32 delivering 128 Mbit total capacity.
  • Performance 143 MHz clock frequency with 5.5 ns access time and a 14 ns write cycle time (word/page), providing deterministic timing for parallel memory operations.
  • Interface Parallel memory interface suitable for systems designed around parallel DRAM connectivity.
  • Power Supply voltage range of 3.0 V to 3.6 V, allowing use in 3 V class systems.
  • Package 86‑TFSOP / 86‑TSOP II package (0.400", 10.16 mm width) for surface‑mount board implementations.
  • Operating Range Specified operating temperature range of -40°C to 85°C (TA) for environments requiring extended temperature support.

Typical Applications

  • Parallel memory subsystems — Acts as a 128 Mbit SDRAM device for systems that require parallel DRAM storage in a compact TSOP II package.
  • Board‑level DRAM expansion — Suited for designs that add DRAM capacity on PCBs using a parallel memory interface and standard TSOP II mounting.
  • Industrial equipment — Provides DRAM capacity and an extended operating temperature range for industrial electronics and control systems.

Unique Advantages

  • Defined capacity and organization: 128 Mbit arranged as 4M × 32 makes capacity planning and memory mapping straightforward for system designers.
  • Deterministic timing: 143 MHz clock, 5.5 ns access time, and 14 ns write cycle time provide explicit timing parameters for integration and validation.
  • 3 V supply compatibility: Operates from 3.0 V to 3.6 V to match common 3 V system power rails.
  • Compact TSOP II package: 86‑TSOP II (0.400", 10.16 mm width) offers a space-efficient, surface-mount form factor for board-level designs.
  • Extended temperature capability: Rated for -40°C to 85°C (TA), enabling use in thermally demanding environments.

Why Choose IC DRAM 128MBIT PAR 86TSOP II?

The MT48LC4M32B2P-7 IT:G TR positions itself as a straightforward, specification-driven SDRAM component for designs that require 128 Mbit of parallel DRAM in an 86‑TSOP II package. Its documented clock, access, and write timing values and 3.0–3.6 V supply range make it suitable for engineers specifying predictable memory behavior on board‑level implementations.

This device is appropriate for designers and procurement teams specifying parallel DRAM capacity with defined electrical and thermal parameters, delivering long-term value through clear, verifiable specifications for integration and system validation.

Request a quote or submit an inquiry to obtain pricing and availability for the MT48LC4M32B2P-7 IT:G TR.

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