MT48LC64M8A2P-75:C TR

The MT48LC64M8A2P-75:C TR is a 512 Mbit synchronous DRAM (SDRAM) organized as 64M × 8 with a parallel memory interface. It implements fully synchronous, pipelined SDR SDRAM architecture with internal banks and features designed for PC100/PC133-compliant systems.

Targeted as board-level system memory, this device provides 133 MHz clock operation (speed grade -75), CL = 3 timing (5.4 ns access time), and a 54-pin TSOP II (400 mil / 10.16 mm) package for compact footprint designs requiring standard 3.0–3.6 V supply operation and commercial temperature range.

Key Features

• Core / Architecture  SDR SDRAM, fully synchronous with internal, pipelined operation and multiple internal banks to hide row access/precharge.
• Memory Organization  512 Mbit total capacity organized as 64M × 8 with 4 internal banks.
• Performance / Timing  PC100- and PC133-compliant; -75 speed grade supports 133 MHz clock frequency with CL = 3 and 5.4 ns access time.
• Burst and Refresh  Programmable burst lengths (1, 2, 4, 8 or full page), auto precharge, auto refresh and self-refresh modes; 64 ms / 8192-cycle refresh count.
• Interface / I/O  Parallel memory interface with LVTTL-compatible inputs and outputs for standard logic-level interfacing.
• Power  Single 3.3 V ±0.3 V power supply range (3.0–3.6 V) to match common system rails.
• Package & Mounting  54-pin TSOP II (0.400", 10.16 mm width) plastic package for surface-mount board designs.
• Operating Range  Commercial temperature grade: 0°C to +70°C (TA).
• Write Cycle  Write cycle time (word page) specified at 15 ns for page-mode operations.

Typical Applications

• PC100/PC133 memory subsystems  Provides 512 Mbit SDRAM capacity and timing compatible with PC100/PC133-compliant platforms.
• Board-level system memory  Compact 54-pin TSOP II footprint for adding parallel SDRAM to embedded or legacy boards requiring a 3.3 V supply.
• Buffered data buffering and burst transfers  Programmable burst lengths and internal pipelined operation support efficient block transfers and burst access patterns.

Unique Advantages

• PC100/PC133 compliance:  Specifies operation at PC100 and PC133 timing grades, enabling use in systems targeting those standard clock rates.
• Low-latency read performance:  CL = 3 timing with a 5.4 ns access time at the -75 speed grade for reduced read latency in synchronous systems.
• Flexible burst control:  Programmable burst lengths (including full-page) and internal banks allow efficient pipelined transfers and column address changes every clock cycle.
• Standard voltage and I/O levels:  Single 3.3 V supply (3.0–3.6 V) and LVTTL-compatible I/O simplify integration with common digital logic rails.
• Compact surface-mount package:  54-pin TSOP II (400 mil) offers a small board footprint for high-density memory implementations.
• Built-in refresh and self-refresh:  Auto refresh and self-refresh support maintain data integrity over standard refresh intervals (8192 cycles / 64 ms).

Why Choose MT48LC64M8A2P-75:C TR?

The MT48LC64M8A2P-75:C TR delivers a proven 512 Mbit SDRAM solution with PC100/PC133-compliant timing, CL = 3 latency, and a compact 54-pin TSOP II package. Its combination of pipelined operation, programmable bursts and standard 3.3 V operation makes it suitable for designs that require synchronous parallel DRAM capacity with predictable timing and standard interfaces.

This device is well suited for engineers specifying commercial-temperature board-level memory where a 64M × 8, 4-bank SDRAM architecture and 133 MHz clock operation are required, offering straightforward integration and standardized refresh and power characteristics.

Request a quote or submit an RFQ to receive pricing and availability information for the MT48LC64M8A2P-75:C TR.