MT48LC64M8A2P-7E:C TR
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 28 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 4 (72 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC64M8A2P-7E:C TR – IC DRAM 512MBIT PAR 54TSOP II
The MT48LC64M8A2P-7E:C TR is a 512 Mbit SDR SDRAM organized as 64M × 8 with four internal banks and a parallel memory interface. It is supplied in a 54-pin TSOP II (0.400", 10.16 mm width) package and operates from a single 3.3 V ±0.3 V supply.
Designed for synchronous, pipelined memory applications, this device is PC100- and PC133-compliant and supports programmable burst lengths, auto refresh/self-refresh modes and LVTTL-compatible I/Os. Key performance specs include up to 133 MHz clocking and a typical access time of 5.4 ns (commercial temperature range 0 °C to 70 °C).
Key Features
- Core Architecture SDR SDRAM with fully synchronous operation; all signals are registered on the positive edge of the system clock to support predictable timing in synchronous systems.
- Memory Organization 512 Mbit capacity arranged as 64M × 8 with four internal banks to enable efficient row/column operations and improved throughput.
- Performance PC100- and PC133-compliant operation with clock frequency up to 133 MHz and a typical access time of 5.4 ns, supporting low-latency read/write cycles.
- Burst and Refresh Options Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, auto refresh and self-refresh modes, plus an 8K refresh count for standard refresh requirements.
- Interface and I/O Parallel memory interface with LVTTL-compatible inputs and outputs for straightforward integration into parallel-memory designs.
- Power Single 3.3 V ±0.3 V supply (3.0–3.6 V) and standard SDRAM power characteristics for systems designed around 3.3 V rails.
- Package and Temperature 54-pin TSOP II (400 mil / 10.16 mm width) plastic package; commercial operating temperature range 0 °C to +70 °C.
- Timing Internal pipelined operation with column address flexibility and a write cycle time (word/page) of 15 ns for predictable write performance.
Typical Applications
- Parallel memory subsystems — Use as a 512 Mbit parallel SDRAM component where PC100/PC133-class synchronous memory is required.
- Embedded systems — Provides system working memory or buffering in designs that require a 3.3 V parallel SDRAM interface and commercial temperature operation.
- Legacy and industrial-class designs — Suitable for systems that rely on TSOP II 54-pin form factor and established SDRAM timing (auto-refresh, self-refresh) features.
Unique Advantages
- Standards compatibility: PC100 and PC133 compliance simplifies integration into designs targeting established SDRAM timing classes.
- Synchronous, pipelined operation: Registered inputs on the clock edge and internal pipelining enable predictable timing and allow column addresses to change every clock cycle.
- Flexible burst and refresh modes: Programmable burst lengths plus auto and self-refresh support reduce system-level refresh management complexity.
- Compact TSOP II package: 54-pin TSOP II (0.400") offers a compact footprint for high-density board layouts while preserving standard pinout options.
- Commercial temperature rating: Specified operation from 0 °C to +70 °C for applications targeting standard commercial environments.
Why Choose IC DRAM 512MBIT PAR 54TSOP II?
The MT48LC64M8A2P-7E:C TR delivers a straightforward, standards-based 512 Mbit SDRAM solution with predictable synchronous timing, PC100/PC133 compatibility, and flexible burst/refresh capabilities. Its 64M × 8 organization, 54-pin TSOP II packaging and 3.3 V single-supply operation make it suitable for designs that require established SDRAM behavior and compact board-level implementation.
This device is appropriate for engineers and procurement teams specifying parallel SDRAM for commercial-temperature systems where verified timing, refresh features and a compact package are required.
Request a quote or submit a pricing inquiry to obtain availability and lead-time information for the MT48LC64M8A2P-7E:C TR.