MT48LC64M8A2P-7E:C TR

IC DRAM 512MBIT PAR 54TSOP II
Part Description

IC DRAM 512MBIT PAR 54TSOP II

Quantity 28 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization64M x 8
Moisture Sensitivity Level4 (72 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT48LC64M8A2P-7E:C TR – IC DRAM 512MBIT PAR 54TSOP II

The MT48LC64M8A2P-7E:C TR is a 512 Mbit SDR SDRAM organized as 64M × 8 with four internal banks and a parallel memory interface. It is supplied in a 54-pin TSOP II (0.400", 10.16 mm width) package and operates from a single 3.3 V ±0.3 V supply.

Designed for synchronous, pipelined memory applications, this device is PC100- and PC133-compliant and supports programmable burst lengths, auto refresh/self-refresh modes and LVTTL-compatible I/Os. Key performance specs include up to 133 MHz clocking and a typical access time of 5.4 ns (commercial temperature range 0 °C to 70 °C).

Key Features

  • Core Architecture SDR SDRAM with fully synchronous operation; all signals are registered on the positive edge of the system clock to support predictable timing in synchronous systems.
  • Memory Organization 512 Mbit capacity arranged as 64M × 8 with four internal banks to enable efficient row/column operations and improved throughput.
  • Performance PC100- and PC133-compliant operation with clock frequency up to 133 MHz and a typical access time of 5.4 ns, supporting low-latency read/write cycles.
  • Burst and Refresh Options Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, auto refresh and self-refresh modes, plus an 8K refresh count for standard refresh requirements.
  • Interface and I/O Parallel memory interface with LVTTL-compatible inputs and outputs for straightforward integration into parallel-memory designs.
  • Power Single 3.3 V ±0.3 V supply (3.0–3.6 V) and standard SDRAM power characteristics for systems designed around 3.3 V rails.
  • Package and Temperature 54-pin TSOP II (400 mil / 10.16 mm width) plastic package; commercial operating temperature range 0 °C to +70 °C.
  • Timing Internal pipelined operation with column address flexibility and a write cycle time (word/page) of 15 ns for predictable write performance.

Typical Applications

  • Parallel memory subsystems — Use as a 512 Mbit parallel SDRAM component where PC100/PC133-class synchronous memory is required.
  • Embedded systems — Provides system working memory or buffering in designs that require a 3.3 V parallel SDRAM interface and commercial temperature operation.
  • Legacy and industrial-class designs — Suitable for systems that rely on TSOP II 54-pin form factor and established SDRAM timing (auto-refresh, self-refresh) features.

Unique Advantages

  • Standards compatibility: PC100 and PC133 compliance simplifies integration into designs targeting established SDRAM timing classes.
  • Synchronous, pipelined operation: Registered inputs on the clock edge and internal pipelining enable predictable timing and allow column addresses to change every clock cycle.
  • Flexible burst and refresh modes: Programmable burst lengths plus auto and self-refresh support reduce system-level refresh management complexity.
  • Compact TSOP II package: 54-pin TSOP II (0.400") offers a compact footprint for high-density board layouts while preserving standard pinout options.
  • Commercial temperature rating: Specified operation from 0 °C to +70 °C for applications targeting standard commercial environments.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The MT48LC64M8A2P-7E:C TR delivers a straightforward, standards-based 512 Mbit SDRAM solution with predictable synchronous timing, PC100/PC133 compatibility, and flexible burst/refresh capabilities. Its 64M × 8 organization, 54-pin TSOP II packaging and 3.3 V single-supply operation make it suitable for designs that require established SDRAM behavior and compact board-level implementation.

This device is appropriate for engineers and procurement teams specifying parallel SDRAM for commercial-temperature systems where verified timing, refresh features and a compact package are required.

Request a quote or submit a pricing inquiry to obtain availability and lead-time information for the MT48LC64M8A2P-7E:C TR.

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