MT48LC64M8A2TG-75 L:C
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,374 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 4 (72 Hours) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC64M8A2TG-75 L:C – IC DRAM 512MBIT PAR 54TSOP II
The MT48LC64M8A2TG-75 L:C is a 512 Mbit SDRAM device in a 54-pin TSOP II (0.400", 10.16 mm width) package. It implements a synchronous, parallel DRAM architecture with a 64M × 8 organization and four internal banks to support pipelined, high-throughput memory transfers.
Designed for systems that require PC100- and PC133-compliant SDRAM operation, the device offers standard 3.3 V operation (3.0 V to 3.6 V), 133 MHz clock operation (–75 speed grade) and a 5.4 ns access time at CL = 3 for responsive read performance.
Key Features
- Core Architecture: Fully synchronous SDRAM with all signals registered on the positive edge of the system clock and internal pipelined operation for column-address changes every clock cycle.
- Memory Organization: 64M × 8 organization with four internal banks, providing a total density of 512 Mbit for standard parallel memory interfaces.
- PC100 / PC133 Compliance: PC100- and PC133-compliant timing options; the –75 speed grade supports 133 MHz operation with CL = 3 and a 5.4 ns access time.
- Burst and Refresh Modes: Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, auto refresh and self-refresh support; 64 ms, 8192-cycle refresh specification.
- Electrical: Single 3.3 V ±0.3 V supply (3.0 V to 3.6 V) with LVTTL-compatible inputs and outputs.
- Timing & Performance: Write cycle time (word/page) of 15 ns and timing parameters defined for CL = 2 and CL = 3 modes across supported speed grades.
- Package & Temperature: 54-pin TSOP II (400 mil) package; commercial operating temperature range 0°C to +70°C (TA).
Typical Applications
- PC100/PC133 memory interfaces: Use where PC100- or PC133-compliant SDRAM is required for system memory subsystems.
- Board-level memory expansion: Provides 512 Mbit parallel SDRAM in a 54-pin TSOP II footprint for module or board upgrades.
- 3.3 V system designs: Suited for designs that operate from a 3.0 V to 3.6 V supply and require LVTTL-compatible signaling.
Unique Advantages
- Standards-aligned timing: PC100 and PC133 timing compliance eases integration into systems designed around those SDRAM standards.
- Flexible burst and bank operation: Programmable burst lengths and four internal banks enable efficient pipelined accesses and flexible data transfer patterns.
- Compact TSOP II package: 54-pin, 0.400" TSOP II packaging provides a standardized footprint for space-constrained board designs.
- Robust refresh options: Auto refresh and self-refresh modes with defined 64 ms/8192-cycle refresh behavior simplify memory maintenance in active and low-power states.
- Defined commercial temperature range: Specified operation from 0°C to +70°C for consistent performance in standard commercial environments.
Why Choose MT48LC64M8A2TG-75 L:C?
The MT48LC64M8A2TG-75 L:C provides a straightforward, standards-aligned 512 Mbit SDRAM solution in a 54-pin TSOP II package. Its fully synchronous architecture, PC100/PC133 timing compatibility and flexible burst/refresh features make it suitable for systems requiring a parallel SDRAM memory element with defined timing and electrical characteristics.
This device is well suited for designs that need a 3.3 V SDRAM memory with a compact TSOP II footprint and commercial temperature operation, offering predictable timing (5.4 ns access at CL = 3 for the –75 grade) and standard refresh behavior for reliable integration into existing memory subsystems.
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