MT48LC64M8A2TG-75:C TR

The MT48LC64M8A2TG-75:C TR is a 512 Mbit synchronous DRAM organized as 64M × 8 with a parallel SDRAM interface in a 54‑pin TSOP II (0.400", 10.16 mm width) package. It implements SDR SDRAM architecture with fully synchronous, positive-edge clocked signaling, internal pipelined operation and internal banks for optimized row access and precharge management.

Designed for systems requiring a 512 Mbit parallel SDRAM device, the device offers PC100 and PC133 compliance, programmable burst lengths, and standard single‑supply operation, making it suitable for board-level memory implementations that need a 54‑TSOP footprint and commercial temperature range operation.

Key Features

• Memory Architecture: 64M × 8 organization providing 512 Mbit density with 4 internal banks to improve access concurrency.
• SDR SDRAM Core: Fully synchronous SDRAM with all signals registered on the positive edge of the system clock; internal pipelined operation allows column address changes every clock cycle.
• Performance / Timing: PC100- and PC133‑compliant operation with a maximum clock frequency of 133 MHz and an access time of 5.4 ns (CL = 3 at -75 speed grade).
• Programmable Burst and Refresh: Supports programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, auto refresh, and self refresh modes with 8192‑cycle refresh (64 ms interval).
• Interface Compatibility: Parallel memory interface with LVTTL‑compatible inputs and outputs for standard SDRAM signalling.
• Power Supply: Single 3.3 V supply (3.0 V to 3.6 V specified); write cycle time (word/page) 15 ns.
• Package and Mounting: 54‑pin TSOP II (400 mil) plastic package (54‑TSOP II, TG marking) suitable for PC board mounting.
• Operating Range: Commercial temperature operation 0°C to +70°C (TA) as specified for the standard device.

Typical Applications

• PC100/PC133 memory subsystems: Use in systems requiring PC100 or PC133‑compliant SDRAM devices for synchronous parallel memory implementations.
• Board-level memory expansion: 512 Mbit density in a 54‑TSOP II package for designs needing higher DRAM capacity in a compact footprint.
• Legacy parallel SDRAM designs: Direct replacement or integration for systems using parallel SDRAM interfaces with LVTTL‑compatible signaling and single 3.3 V supply.

Unique Advantages

• PC100/PC133 Compliance: Conforms to common PC100 and PC133 timing grades, enabling integration into established synchronous memory subsystems.
• Pipelined, Banked Architecture: Internal pipelining and multiple banks reduce effective row‑access latency by allowing column changes every clock cycle.
• Flexible Burst Control: Programmable burst lengths (1, 2, 4, 8, full page) provide adaptable data-transfer modes for varied system requirements.
• Standard 3.3 V Supply: Single 3.0 V to 3.6 V operating range simplifies power design for systems using 3.3 V rails.
• Compact TSOP II Package: 54‑pin TSOP II (400 mil) package delivers 512 Mbit density in a board‑level friendly footprint.
• Refresh and Low‑Power Modes: Supports auto refresh and self refresh to meet dynamic refresh requirements and reduce system management overhead.

Why Choose MT48LC64M8A2TG-75:C TR?

The MT48LC64M8A2TG-75:C TR combines a 512 Mbit SDRAM density with a fully synchronous, pipelined SDRAM architecture and PC100/PC133 timing compatibility, delivering a straightforward memory solution for parallel SDRAM systems that require a 54‑pin TSOP II footprint and standard 3.3 V operation. Its programmable burst lengths, internal banking and refresh modes support efficient data transfers and simplified memory management at the board level.

This part is well suited to designs that need a commercial‑grade SDRAM device with defined timing (5.4 ns access at CL = 3, 133 MHz) and a compact package. It provides long‑term design stability through standard SDRAM features and vendor‑specified electrical and timing parameters.

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