MT48LC64M8A2TG-75 IT:C TR

The MT48LC64M8A2TG-75 IT:C TR is a 512 Mbit SDR SDRAM device manufactured by Micron Technology, Inc., organized as 64M × 8 with four internal banks and a parallel memory interface. It is a fully synchronous SDRAM device with registered signals on the positive edge of the system clock and is offered in a 54-pin TSOP II (400 mil) package.

Designed for systems requiring PC100/PC133-compliant SDRAM performance, this device provides a 133 MHz clock option with 5.4 ns access time (CL = 3) and supports standard SDRAM features such as programmable burst lengths, auto-refresh and self-refresh, and LVTTL-compatible I/O. It operates from a single 3.3 V supply and supports an industrial temperature range of –40°C to 85°C.

Key Features

• Core / Memory Architecture Fully synchronous SDR SDRAM with 64M × 8 organization and four internal banks for concurrent row access and precharge management.
• Performance / Timing PC100- and PC133-compliant operation; 133 MHz clock frequency option with 5.4 ns access time (CL = 3) and a write cycle time (word/page) of 15 ns.
• Burst and Refresh Modes Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, concurrent auto precharge/auto refresh modes, auto refresh, and self-refresh with 8192-cycle refresh (64 ms).
• Interface / I/O Parallel memory interface with LVTTL-compatible inputs and outputs; all signals registered on the positive edge of the system clock for synchronous operation.
• Power Single-supply operation: 3.3 V ±0.3 V (listed supply range 3.0 V to 3.6 V).
• Package 54-pin TSOP II (400 mil / 10.16 mm width) plastic package variant (TG marking option) for surface-mount applications.
• Temperature Range Industrial operating range: –40°C to +85°C (TA).

Typical Applications

• PC100/PC133 system memory Use where PC100- and PC133-compliant SDRAM is required to meet legacy or platform-specific memory interfaces.
• Embedded designs with parallel SDRAM interfaces Suitable for designs that require a 512 Mbit parallel SDRAM device in a compact TSOP II package.
• Industrial-temperature equipment Targets systems that must operate across an industrial temperature range (–40°C to +85°C).

Unique Advantages

• High single-device density: 512 Mbit capacity delivered in a single 64M × 8 SDRAM device reduces board-level component count for mid-density memory needs.
• Synchronous SDRAM timing: Fully synchronous operation with internal pipelining and bank architecture allows column address changes every clock cycle for predictable timing behavior.
• Flexible burst and refresh control: Programmable burst lengths and multiple refresh modes (auto-refresh, self-refresh) simplify memory management across operating modes.
• Industrial-grade temperature range: –40°C to +85°C operation supports deployment in temperature-challenging environments.
• Standard 3.3 V supply: Single 3.3 V ±0.3 V supply compatibility simplifies power design for existing 3.3 V systems.
• Compact TSOP II package: 54-pin TSOP II (400 mil) provides a space-efficient surface-mount footprint for board-level integration.

Why Choose MT48LC64M8A2TG-75 IT:C TR?

The MT48LC64M8A2TG-75 IT:C TR provides a balanced combination of density, synchronous SDRAM features, and industrial-temperature resilience in a compact 54-pin TSOP II package. With PC100/PC133-compliant timing options, LVTTL-compatible I/O, and standard 3.3 V operation, it is suited to designs that require predictable, parallel SDRAM behavior and mid-level memory capacity.

This Micron SDRAM device is appropriate for customers specifying PC100/PC133 SDRAM compatibility, parallel memory interfaces, and industrial temperature operation, offering long-term design stability through a widely documented SDRAM architecture and supported timing parameters.

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