MT48LC64M8A2P-75:C

The MT48LC64M8A2P-75:C is a 512 Mbit synchronous DRAM (SDR SDRAM) organized as 64M × 8 with four internal banks and a parallel memory interface. It is a fully synchronous device with all signals registered on the positive edge of the system clock and is PC100- and PC133-compliant for designs targeting standard SDRAM timing.

With a 133 MHz clock-frequency speed grade (-75), a single 3.3 V ±0.3 V supply (specified 3.0 V–3.6 V), and a commercial operating range of 0 °C to +70 °C, this device is suited for commercial-temperature systems that require a 512 Mbit, board-mount SDRAM in a 54-pin TSOP II package.

Key Features

• Core / Architecture  SDR SDRAM organized as 64M × 8 with four internal banks for improved concurrency and hidden row access.
• Performance / Timing  PC100- and PC133-compliant; 133 MHz clock-frequency (-75 speed grade) with an access time of 5.4 ns (CL = 3) and a write cycle time (word/page) of 15 ns.
• Programmable Burst and Operation  Programmable burst lengths (1, 2, 4, 8, or full page); internal pipelined operation and column address changes allowed every clock cycle.
• Refresh and Power Modes  Auto refresh, self refresh, and a 64 ms, 8192-cycle refresh specification for commercial and industrial options.
• Interfaces / I/O  LVTTL-compatible inputs and outputs with fully synchronous, positive-edge registered signaling for straightforward system integration.
• Power  Single 3.3 V ±0.3 V supply (data sheet range 3.0 V–3.6 V) for standard 3.3 V system rails.
• Package  54-pin TSOP II (400 mil, 10.16 mm width) surface-mount package for space-efficient board layouts.
• Temperature Range  Commercial operating temperature: 0 °C to +70 °C (TA).

Typical Applications

• Legacy and PC memory subsystems  Compatible with PC100/PC133 timing for memory implementations that require standard SDRAM behavior and timing.
• Synchronous memory subsystems  Provides 512 Mbit of parallel SDRAM storage in a 64M × 8 organization suitable for systems requiring banked, burst-capable memory.
• Commercial embedded systems  Operates across 0 °C to +70 °C for commercial-grade embedded electronics using 3.3 V supply rails.

Unique Advantages

• Standards-based timing: PC100/PC133 compliance eases integration into systems expecting established SDRAM timing and behavior.
• Low-latency access at rated speed: 5.4 ns access time at CL = 3 with a 133 MHz clock-frequency (-75) supports responsive read operations.
• Flexible burst and bank management: Programmable burst lengths and four internal banks enable efficient throughput and improved row access hiding.
• Simplified power design: Single 3.3 V ±0.3 V supply (3.0 V–3.6 V) matches common system power rails, reducing PMIC complexity.
• Board-level form factor: 54-pin TSOP II (400 mil) package provides a compact, surface-mount option for dense PCB layouts.
• Commercial temperature compatibility: Rated for 0 °C to +70 °C for deployments in standard commercial environments.

Why Choose MT48LC64M8A2P-75:C?

The MT48LC64M8A2P-75:C delivers a standards-compliant 512 Mbit SDRAM solution optimized for commercial-temperature systems that require PC100/PC133 timing, a 64M × 8 organization, and burst-capable, pipelined SDRAM operation. Its combination of a 133 MHz speed grade, 5.4 ns access time at CL = 3, and support for self-refresh and auto-refresh modes makes it suitable for designs prioritizing predictable synchronous memory behavior.

Packaged in a 54-pin TSOP II and powered from a single 3.3 V supply, this Micron Technology Inc. device is appropriate for engineers specifying board-level SDRAM where proven SDRAM feature set, standard interfaces, and commercial-temperature operation are required.

Request a quote or submit an inquiry for pricing and availability of the MT48LC64M8A2P-75:C to discuss lead times and volume options.