MT48LC64M4A2P-7E:G TR

The MT48LC64M4A2P-7E:G TR is a 256 Mbit synchronous DRAM (SDRAM) organized as 64M × 4 with a parallel memory interface. It implements a fully synchronous architecture with internal pipelined operation and four internal banks to support high-throughput memory access.

Designed for systems operating from a single 3.3 V ±0.3 V supply (3.0–3.6 V) and a commercial temperature range of 0°C to +70°C, this device targets designs requiring PC100/PC133-compliant SDRAM in a compact 54-pin TSOP II package.

Key Features

• Memory Architecture  256 Mbit SDRAM organized as 64M × 4 with 4 internal banks for concurrent row access and precharge.
• Synchronous SDRAM Operation  Fully synchronous device with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
• PC100 / PC133 Compliance  Specified as PC100- and PC133-compliant; the -7E speed grade targets 133 MHz operation with 2-2-2 timing (RCD-RP-CL) and an effective CL timing of 15 ns.
• Programmable Burst and Refresh  Programmable burst lengths (1, 2, 4, 8 or full page) plus auto refresh and self-refresh modes; supports 8192-cycle refresh intervals as defined in the datasheet.
• Timing and Performance  Clock frequency up to 133 MHz, typical access time 5.4 ns and write cycle time (word/page) of 14 ns for responsive read/write operations.
• Power Supply  Single 3.3 V ±0.3 V supply (3.0–3.6 V) with LVTTL-compatible inputs and outputs.
• Package  54-pin TSOP II (0.400", 10.16 mm width) plastic package for compact PCB implementations.
• Operating Range  Commercial temperature grade: 0°C to +70°C (TA).

Typical Applications

• PC100/PC133 Memory Subsystems  Use as PC100- or PC133-compliant DRAM for systems requiring synchronous parallel memory at 133 MHz.
• Compact Board-Level Memory  54-pin TSOP II package supports compact PCB layouts where a 256 Mbit ×4 SDRAM is required.
• 3.3 V Single-Supply Designs  Intended for systems that operate from a single 3.3 V ±0.3 V supply and need LVTTL-compatible I/O.

Unique Advantages

• Flexible Burst and Bank Control:  Programmable burst lengths and four internal banks enable efficient, pipelined column access to improve throughput for sequential transfers.
• PC100/PC133 Compatibility:  Designed to meet PC100 and PC133 timing grades, simplifying integration into systems targeting those clock domains.
• Low-Latency -7E Speed Grade:  -7E speed grade provides 133 MHz operation with 2-2-2 timing (RCD-RP-CL) and a 15 ns CAS latency for accelerated read performance.
• Standard 54-TSOP II Package:  A common 54-pin TSOP II footprint allows use in existing PCB designs and module implementations that accept 0.400" width TSOP devices.
• Single-Supply Operation:  Operates from a single 3.3 V ±0.3 V supply, simplifying power-supply design and board-level integration.

Why Choose MT48LC64M4A2P-7E:G TR?

The MT48LC64M4A2P-7E:G TR delivers a proven SDRAM architecture—64M × 4 organization with four internal banks—combined with PC100/PC133 timing compliance and a -7E speed grade optimized for 133 MHz operation. Its compact 54-pin TSOP II package and single 3.3 V supply requirement make it suitable for designs that need standardized, synchronous parallel memory in a small footprint.

This device is appropriate for engineers specifying commercial-temperature SDRAM with deterministic timing characteristics, programmable burst operation, and standard refresh modes. The straightforward electrical and mechanical specifications support predictable integration into existing board-level memory subsystems.

Request a quote or submit an inquiry for MT48LC64M4A2P-7E:G TR to obtain pricing and availability information.