MT48LC64M4A2P-75:D
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,127 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 4 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT48LC64M4A2P-75:D – IC DRAM 256Mbit PAR 54TSOP II
The MT48LC64M4A2P-75:D is a 256 Mbit synchronous DRAM (SDRAM) device organized as 64M × 4 with four internal banks and a parallel memory interface. Packaged in a 54-pin TSOP II (400 mil, 10.16 mm width), the device operates from a single 3.3 V ±0.3 V supply and supports PC100 and PC133 timing.
Designed for commercial-temperature systems (0°C to +70°C), this SDRAM offers pipelined synchronous operation, programmable burst lengths and standard SDRAM refresh modes for use in designs that require straightforward parallel SDRAM memory integration at PC133 clock rates.
Key Features
- Core / Architecture Organized as 64M × 4 with four internal banks for hidden row access and concurrent operations.
- SDR SDRAM / Compliance PC100- and PC133-compliant synchronous DRAM; all signals register on the positive edge of the system clock.
- Performance / Timing 133 MHz clock frequency (–75 speed grade) with target 3-3-3 timing; access time specified at 5.4 ns and write cycle time (word/page) listed as 15 ns.
- Burst and Pipelining Internal pipelined operation with programmable burst lengths (1, 2, 4, 8, or full page) and column-address changes every clock cycle.
- Refresh and Power Modes Auto refresh, self refresh mode, and 64 ms/8192-cycle refresh behavior for commercial temperature operation.
- I/O and Signaling LVTTL-compatible inputs and outputs for standard SDRAM signaling.
- Supply and Package Single 3.3 V ±0.3 V supply; available in a 54-pin TSOP II (0.400", 10.16 mm width) plastic package.
- Operating Range Commercial operating temperature range: 0°C to +70°C (TA).
Typical Applications
- PC100/PC133 memory subsystems Acts as synchronous DRAM in systems designed for PC100 or PC133 timing.
- Embedded system memory Provides parallel SDRAM storage for embedded designs that require a 3.3 V single-supply memory solution in a TSOP II package.
- Consumer electronics Suitable for commercial-temperature consumer devices that need standard SDRAM features such as programmable bursts and auto refresh.
Unique Advantages
- PC133 timing support: The –75 speed grade targets PC133 operation (133 MHz), enabling designs that rely on that timing profile.
- Pipelined synchronous operation: Fully synchronous design with registered inputs on the clock edge and internal pipelining for efficient column access.
- Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) let designers tune data transfer patterns to system requirements.
- Standard 3.3 V single-supply: Operates from a single 3.3 V ±0.3 V supply, simplifying power-rail requirements in many commercial designs.
- Compact TSOP II packaging: 54-pin TSOP II (400 mil) footprint provides a compact, surface-mount form factor for board-level memory integration.
Why Choose IC DRAM 256MBIT PAR 54TSOP II?
The MT48LC64M4A2P-75:D offers a conventional SDRAM solution with PC100/PC133 timing, programmable burst modes and standard refresh capabilities packaged in a 54-pin TSOP II. Its 64M × 4 organization and four internal banks provide a straightforward memory architecture for commercial-temperature designs that require a parallel SDRAM interface and a 3.3 V single-supply topology.
This device is suited to designers seeking a proven SDRAM part with defined timing grades and packaging for compact board layouts, enabling reliable memory integration in systems where PC133-class synchronous DRAM performance and standard SDRAM control features are required.
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