MT48LC64M4A2BB-6A:G

The MT48LC64M4A2BB-6A:G is a 256 Mbit synchronous DRAM organized as 64M x 4 with four internal banks and a parallel memory interface. It implements SDR SDRAM architecture with fully synchronous operation and registered signals on the positive edge of the system clock.

Designed for systems requiring board-level parallel SDRAM, this device offers PC100/PC133 timing options, a commercial operating range, and a compact 60-ball TFBGA (8×16) package for space-constrained designs.

Key Features

• Core / Architecture 64M × 4 organization with 4 internal banks for bank interleaving and hidden row access/precharge.
• SDR SDRAM Functionality Fully synchronous operation with all signals registered on the positive clock edge and internal pipelined operation allowing column address changes every clock cycle.
• Performance & Timing -6A speed grade targets 167 MHz clock frequency; typical access time 5.4 ns and CAS latency timing of 3-3-3 (18 ns).
• Burst and Refresh Programmable burst lengths (1, 2, 4, 8, or full page), auto precharge, auto refresh modes and self-refresh options; standard refresh counts per the datasheet.
• Power Single-supply operation at 3.3 V (3.0 V to 3.6 V specified).
• Interface & Timing Details Parallel SDRAM interface with write cycle time (word/page) of 12 ns and LVTTL-compatible inputs/outputs per datasheet specifications.
• Package & Mounting 60-ball TFBGA package (8 mm × 16 mm) for compact, board-level mounting.
• Operating Range Commercial temperature range: 0°C to +70°C (TA).

Typical Applications

• PC and legacy system memory Suitable for designs and upgrades that require PC100/PC133-compatible parallel SDRAM memory modules.
• Consumer electronics Used where moderate-density SDRAM (256 Mbit) and 3.3 V single-supply operation are required for buffering and system memory.
• Embedded systems Compact 60-ball TFBGA packaging makes the device appropriate for space-constrained board-level memory implementations in embedded designs.

Unique Advantages

• 256 Mbit density Provides a mid-range memory capacity in a single x4 SDRAM device for efficient board-level memory partitioning.
• PC100/PC133 timing support Documented timing grades including a -6A grade at 167 MHz enable higher-performance SDRAM operation where required.
• Flexible burst and refresh modes Programmable burst lengths and auto/self-refresh options simplify memory control and support varied access patterns.
• Standard 3.3 V supply Operates from a single 3.0 V–3.6 V supply for straightforward power integration with legacy 3.3 V systems.
• Space-optimizing package 60-ball TFBGA (8×16) package reduces board footprint while supporting reliable BGA mounting.
• Deterministic timing Published access times (5.4 ns) and CAS latency targets support predictable system timing analysis.

Why Choose MT48LC64M4A2BB-6A:G?

The MT48LC64M4A2BB-6A:G is positioned for designers needing a compact, mid-density parallel SDRAM device with documented PC100/PC133 timing grades, programmable burst capabilities, and standard 3.3 V operation. Its 64M × 4 organization and four-bank architecture enable efficient memory banking and predictable timing behavior.

This device is appropriate for commercial-temperature embedded and consumer applications where a compact 60-ball TFBGA package and reliable SDRAM features (auto refresh, programmable bursts, registered synchronous operation) are required for board-level memory integration.

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