MT48LC64M4A2P-6A:G TR

The MT48LC64M4A2P-6A:G TR is a 256 Mbit synchronous DRAM organized as 64M × 4 with four internal banks and a parallel memory interface. It is a fully synchronous SDRAM device designed for systems requiring PC100/PC133-compliant SDRAM behavior and standard 54-pin TSOP II packaging.

This device targets designs that need a 256 Mbit parallel DRAM solution with high-speed operation (up to 167 MHz for the -6A speed grade), programmable burst lengths, and standard refresh and power characteristics suitable for commercial temperature ranges.

Key Features

• Memory Architecture 256 Mbit SDRAM organized as 64M × 4 with four internal banks for parallelized row/column access.
• Synchronous SDRAM Core Fully synchronous operation with all signals registered on the positive edge of the system clock; internal pipelined operation allows column address changes every clock cycle.
• Performance -6A speed grade supports a 167 MHz clock frequency; target timing for -6A is RCD–RP–CL = 3–3–3. Access time listed at 5.4 ns.
• Burst and Command Flexibility Programmable burst lengths of 1, 2, 4, 8, or full page; supports auto precharge, concurrent auto precharge and auto refresh modes.
• Refresh and Self-Refresh Auto refresh and self-refresh support (note: self refresh not available on AT devices); 8K refresh cycles per refresh period as specified.
• Interface and I/O LVTTL-compatible inputs and outputs with a parallel memory interface and standard SDRAM control signals.
• Power Single-supply operation around 3.3 V (specified 3.0 V to 3.6 V; datasheet notes single 3.3 V ±0.3 V supply).
• Package and Temperature 54-pin TSOP II (0.400", 10.16 mm width) plastic package; commercial operating temperature range 0°C to +70°C.

Typical Applications

• Legacy and embedded memory subsystems Use as a parallel SDRAM memory component where 256 Mbit density and TSOP II packaging fit board-level designs.
• Systems requiring PC100/PC133-compliant SDRAM Suitable for designs that reference PC100/PC133 SDRAM timing and signaling profiles.
• Board-level buffering and working memory Employed where programmable burst lengths and internal bank architecture benefit bursty data transfers and buffering tasks.

Unique Advantages

• High-speed -6A timing: 167 MHz clock support with 3-3-3 RCD–RP–CL target timing for responsive read/write cycles.
• Flexible burst control: Programmable burst lengths including full-page options for tuning throughput to system requirements.
• Standard 3.3 V supply: Operates from a 3.0 V–3.6 V range (3.3 V ±0.3 V), matching common legacy SDRAM power rails.
• Standard TSOP II package: 54-pin TSOP II (0.400") package simplifies replacement and board-level integration in established form factors.
• Built-in refresh management: Auto refresh and self-refresh capabilities reduce external refresh handling and simplify memory controller requirements.
• Commercial temperature rating: Rated for 0°C to +70°C operation for designs targeting commercial environments.

Why Choose MT48LC64M4A2P-6A:G TR?

The MT48LC64M4A2P-6A:G TR provides a straightforward, standards-oriented 256 Mbit SDRAM option in a 54-pin TSOP II package. Its synchronous, pipelined architecture with four internal banks and programmable burst lengths supports designs that need predictable timing, flexible burst behavior, and compatibility with PC100/PC133 SDRAM timing profiles.

This device is suited to engineers and procurement teams looking for a commercial-temperature, 3.3 V parallel SDRAM solution with defined speed grades and established package options, delivering clear integration points for board-level memory subsystems.

Request a quote or contact sales to discuss availability, lead times, and pricing for the MT48LC64M4A2P-6A:G TR.