MTFC32GAZAOTD-AAT

IC FLASH 256GBIT UFS
Part Description

IC FLASH 256GBIT UFS

Quantity 982 Available (as of May 4, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package153-BGAMemory FormatFLASHTechnologyFLASH - NAND (SLC)
Memory Size256 GbitAccess TimeN/AGradeAutomotive
Clock Frequency52 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 105°C (TC)Write Cycle Time Word PageN/APackaging153-BGA
Mounting MethodNon-VolatileMemory InterfaceUFS2.1Memory Organization32G x 8
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unaffected
QualificationAEC-Q100ECCNN/AHTS CodeN/A

Overview of MTFC32GAZAOTD-AAT – IC FLASH 256GBIT UFS

The MTFC32GAZAOTD-AAT is a 256 Gbit non-volatile Universal Flash Storage (UFS) device from Micron Technology Inc., implemented with NAND SLC flash. It is organized as 32G × 8 and uses the UFS 2.1 memory interface for integration into host systems.

Designed and qualified for automotive applications, the device features AEC-Q100 qualification, a wide operating temperature range, and a compact 153-ball BGA package, making it suitable for systems that require high-density, robust non-volatile storage solutions.

Key Features

  • Memory Technology  Non-volatile NAND (SLC) flash delivering 256 Gbit capacity organized as 32G × 8 for high-density storage.
  • Memory Interface  UFS 2.1 interface for standardized host connectivity and integration into UFS-capable systems.
  • Clock Frequency  52 MHz clock frequency for device timing and host interface operation.
  • Voltage Supply  Operates from 2.7 V to 3.6 V to match common system power rails.
  • Automotive Qualification  AEC-Q100 qualification indicates suitability for automotive electronic applications.
  • Temperature Range  Rated for −40°C to 105°C (TC) operation to support wide-temperature deployments.
  • Package  153-ball BGA (153-BGA) package for compact mounting in space-constrained designs.
  • Memory Format  Managed flash in UFS format for non-volatile data and code storage.

Typical Applications

  • Automotive electronic systems  Qualified for AEC-Q100, suitable for vehicle storage functions and automotive-grade non-volatile memory requirements.
  • Embedded systems with UFS support  Provides high-density UFS 2.1 storage for embedded platforms that implement the UFS host interface.
  • Wide-temperature deployments  Applicable where operation across −40°C to 105°C is required.

Unique Advantages

  • AEC-Q100 qualification:  Meets automotive-grade qualification to support designs requiring certified components.
  • High storage density:  256 Gbit capacity (32G × 8) enables significant on-board non-volatile storage in a single device.
  • Standard UFS 2.1 interface:  Facilitates integration with UFS-capable hosts and standardized system designs.
  • Wide operating temperature:  −40°C to 105°C rating supports demanding thermal environments.
  • Flexible power range:  2.7 V to 3.6 V supply range aligns with common system power rails for straightforward power design.
  • Compact BGA package:  153-BGA package conserves board area for space-constrained applications.

Why Choose IC FLASH 256GBIT UFS?

The MTFC32GAZAOTD-AAT positions itself as a high-density, automotive-qualified UFS storage option that combines SLC NAND reliability with the UFS 2.1 interface for standardized system integration. Its wide temperature rating, AEC-Q100 qualification, and compact 153-BGA package make it suitable for designs that require durable non-volatile storage in constrained form factors.

This device is appropriate for engineers and designers building automotive and embedded systems that need verified qualification, robust thermal performance, and a standardized UFS interface for data and code storage.

If you require pricing, availability, or additional technical information, request a quote or submit a pricing inquiry to our sales team to discuss your project requirements and ordering options.

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