MTFC64GJVDN-3M WT TR
| Part Description |
IC FLASH 512GBIT MMC 169LFBGA |
|---|---|
| Quantity | 900 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 169-LFBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -25°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 169-LFBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | MMC | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MTFC64GJVDN-3M WT TR – IC FLASH 512Gbit MMC 169-LFBGA
The MTFC64GJVDN-3M WT TR is a 512 Gbit non-volatile FLASH memory device based on NAND technology and packaged in a 169-LFBGA (14×18) form factor. It is part of Micron's e•MMC™ series and provides storage organized as 64G × 8 with an MMC memory interface.
Designed for systems that require high-density embedded storage, the device operates from a 2.7 V to 3.6 V supply and supports an ambient operating temperature range of −25°C to 85°C, enabling integration into applications with these electrical and thermal constraints.
Key Features
- Memory Type & Technology
Non-volatile FLASH – NAND technology organized as 64G × 8 for a total of 512 Gbit of FLASH storage. - Memory Interface
MMC memory interface for host connectivity. - Voltage Supply
Operates from 2.7 V to 3.6 V. - Package
169-LFBGA package, supplier device package specified as 169-LFBGA (14×18). - Operating Temperature
Ambient operating range −25°C to 85°C (TA). - Series
Part of the Micron e•MMC™ series.
Unique Advantages
- High storage density: 512 Gbit capacity in a single FLASH device supports large embedded data storage requirements.
- MMC connectivity: MMC interface provides a defined host connection method for systems using MMC host controllers.
- Flexible supply range: 2.7 V–3.6 V operation aligns with common 3.3 V system power rails.
- Compact package: 169-LFBGA (14×18) package enables board-level integration in constrained layouts.
- Specified ambient range: −25°C to 85°C operating temperature accommodates a range of ambient environments.
Why Choose MTFC64GJVDN-3M WT TR?
The MTFC64GJVDN-3M WT TR delivers a high-capacity, single-device FLASH storage option with an MMC interface, suitable for designs that require 512 Gbit of non-volatile NAND storage within defined voltage and temperature limits. Its 169-LFBGA package and Micron e•MMC™ series pedigree make it straightforward to specify where a compact, MMC-connected storage element is required.
Choose this device when your design needs a verified MMC-connectivity memory component with explicit electrical and thermal parameters (2.7 V–3.6 V, −25°C to 85°C) and a clear package footprint for PCB integration.
Request a quote or contact sales to discuss availability and pricing for MTFC64GJVDN-3M WT TR.
