MTFC64GJTDN-4M IT
| Part Description |
IC FLASH 512GBIT MMC 169LFBGA |
|---|---|
| Quantity | 751 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Non-Volatile | Memory Interface | MMC | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MTFC64GJTDN-4M IT – IC FLASH 512GBIT MMC 169LFBGA
The MTFC64GJTDN-4M IT from Micron Technology Inc. is a 512 Gbit non-volatile FLASH NAND memory device in an MMC interface format and is part of the e•MMC™ series. It uses a 64G × 8 memory organization to provide high-density embedded storage.
With an operating voltage range of 2.7 V to 3.6 V and an ambient operating temperature range of −40°C to 85°C (TA), this device is intended for systems requiring MMC-based flash storage within those electrical and thermal limits.
Key Features
- Memory Type & Technology Non-volatile FLASH - NAND memory organized as 64G × 8, delivering a total capacity of 512 Gbit.
- Memory Interface MMC interface for host connectivity using the e•MMC™ architecture indicated by the product series.
- Voltage Supply Operates from 2.7 V to 3.6 V, supporting systems with standard single-supply rails in that range.
- Operating Temperature Rated for −40°C to 85°C (TA), covering a wide ambient temperature range.
- Memory Format & Organization FLASH memory formatted and organized as specified (64G × 8) for high-density embedded storage.
- Package Identification Device designation includes 169LFBGA in the product name, indicating a ball-grid array package form factor as listed.
Unique Advantages
- High storage density: 512 Gbit capacity reduces the need for additional external memory components when high embedded storage is required.
- Standard MMC interface: MMC interface simplifies integration into host systems that implement MMC-based flash storage.
- Wide supply voltage range: 2.7 V to 3.6 V operation allows use with common single-supply power domains.
- Broad operating temperature: −40°C to 85°C (TA) supports deployment across a wide range of ambient conditions.
- e•MMC™ series packaging: Part of Micron’s e•MMC™ series, providing a clear product family designation for system planning.
- NAND FLASH architecture: FLASH - NAND memory format provides persistent, non-volatile storage in a compact form.
Why Choose IC FLASH 512GBIT MMC 169LFBGA?
The MTFC64GJTDN-4M IT targets designs that require high-density, non-volatile NAND flash storage delivered over an MMC interface with defined electrical and thermal operating envelopes. Its 512 Gbit capacity, 64G × 8 organization, and 2.7 V–3.6 V supply range make it suitable for systems that need substantial embedded storage within those constraints.
This device is appropriate for engineers and procurement teams specifying e•MMC™-series flash from Micron Technology Inc. where a known capacity, MMC interface, and wide operating temperature range are key selection criteria.
Request a quote or contact sales to inquire about availability, pricing, and technical details for the MTFC64GJTDN-4M IT.
