MTFC64GJVDN-3M WT
| Part Description |
IC FLASH 512GBIT MMC 169LFBGA |
|---|---|
| Quantity | 1,588 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 169-LFBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -25°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 169-LFBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | MMC | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MTFC64GJVDN-3M WT – IC FLASH 512GBIT MMC 169LFBGA
The MTFC64GJVDN-3M WT from Micron Technology Inc. is a 512 Gbit non-volatile FLASH NAND memory device in an e•MMC™ form factor. It provides organized storage as 64G × 8 with an MMC memory interface for use in systems that require embedded flash storage.
Packaged in a 169-LFBGA (14 × 18) and supporting a supply voltage range of 2.7 V to 3.6 V, this device is suited to designs that need high-density NAND storage with defined operating temperature support.
Key Features
- Memory Capacity and Organization 512 Gbit total capacity organized as 64G × 8 for high-density non-volatile storage.
- Memory Technology FLASH - NAND technology and FLASH memory format provide persistent data retention without power.
- Interface MMC memory interface for embedded storage applications that use the MMC standard.
- Supply Voltage Operates across a 2.7 V to 3.6 V supply range, enabling compatibility with common system rails.
- Package 169-LFBGA package (14 × 18) designed for compact board-level integration.
- Operating Temperature Rated for ambient temperatures from −25°C to 85°C (TA), supporting deployment across varied thermal conditions.
Typical Applications
- Embedded Storage Systems — Provides high-density non-volatile storage where an MMC interface is required for firmware, file systems, or media storage.
- Consumer Electronics — Suitable for devices that integrate MMC-based flash for application and multimedia storage.
- Industrial Equipment — Can be used in equipment requiring NAND flash storage within the specified −25°C to 85°C operating range.
Unique Advantages
- High Capacity in a Compact Package: 512 Gbit density in a 169-LFBGA (14 × 18) package helps maximize storage while minimizing PCB area.
- MMC Interface Compatibility: Native MMC memory interface simplifies integration into systems designed for MMC-based storage.
- Wide Supply Voltage Window: 2.7 V to 3.6 V operation supports common system power rails and eases power-supply design.
- Non-Volatile NAND Technology: FLASH NAND provides persistent data retention without power, suitable for long-term storage.
- Ambient Temperature Support: Rated −25°C to 85°C to accommodate varied operating environments.
Why Choose IC FLASH 512GBIT MMC 169LFBGA?
The MTFC64GJVDN-3M WT positions itself as a high-density, MMC-interface FLASH NAND device from Micron Technology Inc., combining 512 Gbit capacity with a compact 169-LFBGA package. Its voltage and temperature specifications make it suitable for designs that require reliable embedded non-volatile storage within the stated electrical and thermal limits.
This product is appropriate for engineers and procurement teams developing systems that need MMC-based flash memory with a clear capacity and packaging profile, offering predictable integration characteristics and long-term storage capability tied to Micron's manufacturing.
Request a quote or contact sales to discuss pricing, availability, and how this device fits your project requirements.
