MTFC64GJTDN-3F WT

IC FLASH 512GBIT MMC 169LFBGA
Part Description

IC FLASH 512GBIT MMC 169LFBGA

Quantity 283 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageN/AMemory FormatFLASHTechnologyFLASH - NAND
Memory Size512 GbitAccess TimeN/AGradeIndustrial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-25°C ~ 85°C (TA)Write Cycle Time Word PageN/APackagingN/A
Mounting MethodNon-VolatileMemory InterfaceMMCMemory Organization64G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MTFC64GJTDN-3F WT – IC FLASH 512GBIT MMC 169LFBGA

The MTFC64GJTDN-3F WT is a non-volatile NAND flash memory device in Micron Technology Inc.'s e•MMC™ series, providing 512 Gbit of storage capacity. It implements a MMC memory interface and is organized as 64G × 8, offering a compact solution for systems that require onboard flash storage.

Designed to operate from a 2.7 V to 3.6 V supply and across an ambient temperature range of −25°C to 85°C, this device targets applications that need high-density NAND flash with standard MMC connectivity.

Key Features

  • Memory Type  Non-volatile FLASH - NAND technology providing 512 Gbit of storage.
  • Memory Organization  Configured as 64G × 8 to define the internal data organization and addressing.
  • Memory Interface  MMC interface for integrated storage connectivity in host systems.
  • Voltage Supply  Operates from 2.7 V to 3.6 V, suitable for systems adhering to that supply range.
  • Operating Temperature  Specified ambient range of −25°C to 85°C (TA) for typical environmental conditions.
  • Series and Package  Part of the e•MMC™ series; product name indicates a 169LFBGA package format.

Typical Applications

  • Embedded Storage  Provides 512 Gbit of non-volatile NAND storage via MMC interface for embedded systems requiring onboard flash memory.
  • Consumer Electronics  Suitable for devices that integrate MMC-based flash storage where 512 Gbit capacity is required.
  • Industrial Equipment  Can be used in industrial designs operating within the specified −25°C to 85°C ambient range and 2.7 V–3.6 V supply.

Unique Advantages

  • High storage density: 512 Gbit capacity enables high-volume data storage within a single e•MMC device.
  • Standard MMC interface: MMC connectivity supports straightforward integration into systems that accept MMC memory devices.
  • Wide supply range: 2.7 V–3.6 V operation accommodates common system power rails.
  • Temperature resilience: Rated for −25°C to 85°C ambient operation to match a range of environmental requirements.
  • Defined memory organization: 64G × 8 organization provides clear addressing and capacity structure for system design.

Why Choose MTFC64GJTDN-3F WT?

The MTFC64GJTDN-3F WT offers a clear specification set for designers seeking 512 Gbit non-volatile NAND flash with MMC interface in an e•MMC™ product. Its voltage and temperature ranges, combined with a 64G × 8 organization, make it suitable for systems that require substantial onboard storage with standard MMC connectivity.

This device is appropriate for engineers and procurement teams specifying embedded storage where capacity, defined electrical requirements, and ambient temperature range are primary selection criteria. As a Micron Technology Inc. e•MMC™ series part, it provides a straightforward option for designs that demand verified memory capacity and interface compatibility.

Request a quote or contact sales to discuss availability, pricing, and lead times for the MTFC64GJTDN-3F WT.

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