AS4C32M16D1A-5TAN
| Part Description |
IC DRAM 512MBIT PAR 66TSOP II |
|---|---|
| Quantity | 832 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Alliance Memory, Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 16 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP II | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Automotive | ||
| Clock Frequency | 200 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TC) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of AS4C32M16D1A-5TAN - 512Mbit DDR SDRAM for Automotive Applications
The AS4C32M16D1A-5TAN is a 512Mbit DDR SDRAM memory device from Alliance Memory, Inc., organized as 32M x 16. This automotive-grade volatile memory solution delivers 200MHz clock frequency operation with 7ns access time, specifically engineered for demanding applications requiring AEC-Q100 qualification. Designed for extended temperature range operation from -40°C to 105°C, this parallel interface DRAM provides reliable, high-performance memory storage for automotive and industrial systems.
Key Features
- High-Density Memory Architecture - 512Mbit capacity organized as 32M x 16 provides substantial memory depth for data-intensive automotive applications while maintaining a compact 66-TSOP II footprint.
- DDR SDRAM Technology - Synchronous double data rate operation at 200MHz clock frequency delivers efficient bandwidth for real-time processing requirements with 7ns access time and 15ns write cycle time.
- Automotive Qualification - AEC-Q100 qualified with extended temperature range (-40°C to 105°C TC) ensures reliable operation in harsh automotive environments across the full component temperature specification.
- Parallel Interface - Standard parallel memory interface simplifies integration with existing embedded system architectures and microcontroller designs.
- Low Voltage Operation - 2.3V to 2.7V supply voltage reduces power consumption while maintaining high performance in battery-powered and energy-conscious applications.
- Industry-Standard Package - 66-TSSOP package (0.400", 10.16mm width) enables surface mount assembly with proven thermal and mechanical characteristics.
Typical Applications
- Automotive Infotainment Systems - This DDR SDRAM provides high-bandwidth memory for multimedia processing, navigation data buffering, and user interface rendering where AEC-Q100 qualification ensures reliability in vehicle environments.
- Advanced Driver Assistance Systems (ADAS) - The 200MHz operation and 512Mbit capacity support real-time image processing and sensor fusion algorithms where extended temperature tolerance maintains performance across all operating conditions.
- Automotive Instrument Clusters - Parallel interface and automotive qualification make this SDRAM suitable for digital instrument panel systems requiring fast refresh rates and graphical display buffering.
- Industrial Control Systems - Extended temperature range and AEC-Q100 qualification enable deployment in industrial environments where PLCs and motion controllers demand reliable memory performance.
- Automotive Body Electronics - The device supports body control modules and gateway ECUs where moderate density volatile memory is required with proven automotive-grade reliability.
Unique Advantages
- Proven Automotive Reliability: AEC-Q100 qualification and extended temperature testing reduce qualification time and design risk for automotive system developers.
- Simplified BOM Management: Standard parallel DDR SDRAM interface enables straightforward migration from other memory technologies without significant hardware redesign.
- Thermal Performance: TC temperature grading to 105°C accommodates demanding thermal environments without requiring additional cooling solutions or derating.
- Supply Chain Continuity: Active lifecycle status with Alliance Memory support provides long-term availability assurance for multi-year automotive production programs.
- Design Flexibility: Wide voltage supply range (2.3V to 2.7V) accommodates various system power architectures and enables operation with standard automotive voltage rails.
- Compact Footprint: 66-TSOP II package balances density requirements with manufacturability for space-constrained automotive ECU designs.
Why Choose AS4C32M16D1A-5TAN?
The AS4C32M16D1A-5TAN addresses the specific requirements of automotive system designers who need automotive-qualified volatile memory with proven DDR SDRAM technology. Its combination of AEC-Q100 qualification, extended temperature range, and industry-standard parallel interface makes it particularly suitable for automotive infotainment, ADAS, and body electronics applications where reliability cannot be compromised. The device's 200MHz operation and 512Mbit capacity strike an optimal balance between performance and integration complexity for mid-range automotive embedded systems.
For automotive OEMs and Tier 1 suppliers developing next-generation vehicle electronics, this Alliance Memory DDR SDRAM provides a qualified, reliable memory solution backed by datasheet specifications and automotive-grade testing. The standard package and interface reduce development risk while the extended temperature qualification ensures consistent operation across global automotive operating conditions.
Get Started
Contact our technical sales team to request detailed specifications, pricing, and availability for the AS4C32M16D1A-5TAN. Our engineers can assist with design integration, qualification documentation, and long-term supply planning for your automotive program requirements.
