AS4C32M16D2-25BCN

The AS4C32M16D2-25BCN is a 512 Mbit DDR2 synchronous DRAM organized as 32M × 16 bits. It implements a quad-bank architecture with a 4-bit prefetch and internal pipeline to support high-speed DDR2 operation.

Designed for JEDEC-compliant DDR2 memory subsystems, this device targets commercial-temperature applications requiring a 1.8 V I/O interface and a fast clock rate up to 400 MHz (800 Mbps/pin). It is supplied in an 84-ball TFBGA package (8.0 × 12.5 × 1.2 mm).

Key Features

• Memory Core  512 Mbit capacity, organized as 32M × 16 bits with 4 internal banks for concurrent operation.
• DDR2 Architecture  Double-Data-Rate-Two (DDR2) synchronous operation with a 4-bit prefetch and internal pipeline architecture.
• Performance  Fast clock rate: 400 MHz (800 Mbps/pin); access time listed as 400 ps and write cycle time (word page) of 15 ns.
• Interface & Timing  Differential clock inputs (CK & CK#), bidirectional data strobes (DQS & DQS#), burst lengths of 4 or 8, and programmable posted CAS additive latency (AL = 0–6).
• Power & Voltage  JEDEC standard 1.8 V I/O (VDD & VDDQ = +1.8 V ± 0.1 V) with support for precharge and active power-down modes, auto refresh and self refresh.
• Signal Integrity & Drive  On-Die Termination (ODT), Off-Chip Driver (OCD) impedance adjustment, and adjustable data-output drive strength.
• Reliability & Refresh  8192 refresh cycles/64 ms with specified average refresh periods across the commercial temperature range.
• Package & Temperature  84-ball TFBGA (8.0 × 12.5 × 1.2 mm) in commercial temperature grade: 0°C to +85°C. Pb and halogen free / RoHS compliant.

Typical Applications

• DDR2 memory subsystems  Used as a 1.8 V, 512 Mbit DDR2 component in system memory designs targeting 800 Mbps/pin operation.
• Board-level memory integration  Suitable for integration onto memory modules or system boards requiring an 84-ball TFBGA DDR2 device.
• Commercial embedded systems  Appropriate for commercial-temperature designs (0°C to +85°C) needing synchronous DDR2 storage with programmable latency and burst operation.

Unique Advantages

• High data-rate capability: Supports 400 MHz clocking (800 Mbps/pin) for designs requiring elevated DDR2 throughput.
• Flexible latency and burst control: Programmable posted CAS additive latency (0–6), selectable burst lengths (4 or 8) and burst type (sequential/interleave) to tune system timing.
• On-chip signal conditioning: On-Die Termination, Off-Chip Driver impedance adjustment and adjustable drive strength improve signal integrity options.
• Power-management features: Auto refresh, self refresh, and active/precharge power-down modes help manage power in system implementations.
• Compact package: 84-ball TFBGA (8.0 × 12.5 × 1.2 mm) provides a small footprint for board-level memory integration.
• Standards compliance: JEDEC standard compliant DDR2 interface and JEDEC 1.8 V I/O compatibility for predictable system integration.

Why Choose AS4C32M16D2-25BCN?

The AS4C32M16D2-25BCN delivers a JEDEC-compliant DDR2 solution with 512 Mbit density, 4-bank organization and features such as ODT, OCD impedance adjustment and programmable latencies. Its 400 MHz clock rating and 4-bit prefetch architecture make it suitable for commercial designs that require synchronous DDR2 performance at 1.8 V supply levels.

Packaged in an 84-ball TFBGA and specified for 0°C to +85°C operation, this device is intended for board-level integration where predictable DDR2 timing, configurable drive and termination options, and standard-compliant operation are required.

Request a quote or contact sales to discuss availability, lead times and volume pricing for the AS4C32M16D2-25BCN.