B3221PM3BDGUI-U

The B3221PM3BDGUI-U is a 32 Gbit low-power DRAM device based on the LPDDR4 architecture, delivered in a 200-ball FBGA package. It combines parallel memory interface organization with LPDDR4 features to provide high data throughput and configurable timing for power-sensitive system designs.

Designed for mobile LPDDR4 applications and compact embedded implementations, the device targets designs that require high-density, low-voltage memory with advanced refresh and power management options.

Key Features

• Core & Organization 32 Gbit capacity organized as 2G × 16 with two 16Gb (x16) die in one package (32Gb case); supports multiple banks for concurrent operation.
• Performance Supports high data rates (up to 4266 Mbps per datasheet), with a clock frequency listed at 1.866 GHz and an access time of 3.5 ns; double-data-rate architecture enables two transfers per clock cycle.
• Power & Voltage Low-power LPDDR4 supply domains: VDD1 = 1.70 V to 1.95 V and VDD2/VDDCA/VDDQ = 1.06 V to 1.17 V to support optimized system power management.
• Memory Management Per-bank refresh, Partial Array Self-Refresh (PASR), auto-refresh and self-refresh support, with 8192 refresh cycles per 32 ms and an average refresh period of 3.9 μs.
• Programmability & Timing Programmable read latency (RL) and write latency (WL), programmable driver strength, selectable burst lengths (16, 32 and on-the-fly), and auto precharge options to tune performance versus power.
• Interfaces Parallel memory interface with differential clock inputs (CK_t/CK_c), bi-directional differential data strobe (DQS_t/DQS_c), and DMI/DBI support for data masking and DBIdc functionality.
• Package & Mounting 200-ball FBGA package (supplier package: 200-FBGA, 10 × 14.5 mm) suitable for surface-mount assembly; mounting type: volatile.
• Operating Temperature Standard operating temperature TC = −25 °C to +85 °C; datasheet also notes an industrial option TC = −40 °C to +95 °C.

Typical Applications

• Mobile devices As LPDDR4 system memory where low-voltage operation and high data throughput are required.
• Embedded systems For compact designs that require 32 Gbit of low-power DRAM in a 200-ball FBGA footprint.
• Discrete memory implementations Use in module- or board-level designs needing programmable timing, per-bank refresh and advanced power-management features.

Unique Advantages

• High-density dual-die packaging: Two 16 Gb (x16) die in a single FBGA deliver 32 Gbit capacity without increasing package count.
• High data-rate capability: Supports LPDDR4 double-data-rate transfers and datasheet-specified data rates up to 4266 Mbps for bandwidth-critical applications.
• Low-voltage operation: Separate VDD domains with defined ranges (1.70–1.95 V and 1.06–1.17 V) enable optimized power distribution and reduced energy use.
• Advanced refresh and power controls: Per-bank refresh, PASR, ATCSR and self-refresh options reduce active power and provide finer control over retention behavior.
• Configurable performance tuning: Programmable RL/WL, burst length choices and driver strength settings allow designers to balance latency, throughput and power.
• Package-level integration: 200-ball FBGA (10 × 14.5 mm) provides a compact, surface-mount solution for high-density memory integration.

Why Choose B3221PM3BDGUI-U?

The B3221PM3BDGUI-U positions itself as a high-density LPDDR4 DRAM device that combines low-voltage operation, configurable timing, and advanced refresh features in a single 200-ball FBGA package. It is suited to designs that require 32 Gbit of LPDDR4 memory with flexible power and performance trade-offs.

Engineers specifying this device benefit from its dual-die capacity, high data-rate capability, and on-package programmability for latency, driver strength and refresh behavior—enabling scalable, robust memory solutions for mobile and compact embedded applications.

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