C3222PM4CDGUIW-U
| Part Description |
C3222PM4CDGUIW-U |
|---|---|
| Quantity | 562 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Kingston Technology |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 24 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 200-FBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | 3.5 ns | Grade | Automotive | ||
| Clock Frequency | 1.86 GHz | Voltage | N/A | Memory Type | N/A | ||
| Operating Temperature | -40°C ~ 95°C | Write Cycle Time Word Page | N/A | Packaging | 200-WFBGA | ||
| Mounting Method | N/A | Memory Interface | N/A | Memory Organization | 1G x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | N/A | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of C3222PM4CDGUIW-U – 32 Gbit Mobile LPDDR4 DRAM (200‑ball FBGA)
The C3222PM4CDGUIW-U is a 32 Gbit Low Power DRAM (LPDDR4) device in a 200‑ball FBGA package designed for mobile-oriented, low‑power memory applications. The device implements a 1024M × 32‑bit organization (two 16Gbit ×32 dies in one package) and supports high‑speed, double‑data‑rate transfers for bandwidth‑sensitive systems.
Its architecture includes programmable latency and driver strength, per‑bank refresh and self‑refresh modes, and support for industrial temperature operation, providing a combination of performance, power efficiency and environmental robustness for compact systems.
Key Features
- Core / Memory Organization 32 Gbit total capacity implemented as 1024M × 32 bits (two 16Gb ×32 dies per package), with two channels and multiple banks for concurrent operation.
- Performance Supports high data rates up to 3733 Mbps (max) and a clock frequency listed at 1.86 GHz; double‑data‑rate architecture provides two data transfers per clock cycle. Programmable Read Latency (RL) and Write Latency (WL) options are supported.
- Timing & Access Fast access time of 3.5 ns; burst lengths of 16, 32 and on‑the‑fly mode (enabled by MRS) for flexible burst transfer control.
- Power & Voltage Domains Low‑power LPDDR4 design with power rails specified in the datasheet: VDD1 = 1.8 V (1.7 V–1.95 V) and VDD2 / VDDQ = 1.1 V (1.06 V–1.17 V).
- Refresh & Power Management Auto‑refresh, self‑refresh, per‑bank refresh, Partial Array Self‑Refresh (PASR) and Auto Temperature Compensated Self‑Refresh (ATCSR) via built‑in temperature sensor.
- Reliability / Masking Bank masking and segment masking supported to manage refresh and access across memory regions.
- Interface Differential clock inputs (CK_t/CK_c), bi‑directional differential data strobe (DQS_t/DQS_c), and DMI pin support for write data masking and DBIdc functionality.
- Package & Mechanical 200‑ball FBGA (200‑WFBGA), supplier device package specified as 200‑FBGA (10 × 14.5 mm) for compact system integration.
- Operating Temperature Industrial temperature range available: −40 °C to +95 °C (also supported: standard range −25 °C to +85 °C per datasheet revision history).
Typical Applications
- Mobile Devices High‑density LPDDR4 memory suited for mobile platforms requiring compact, low‑power, high‑bandwidth DRAM.
- Industrial Electronics Industrial temperature option (−40 °C to +95 °C) enables use in robust embedded systems and industrial equipment operating across wide temperature ranges.
- Bandwidth‑Intensive Handhelds High data‑rate capability and programmable latencies support handheld devices and portable equipment that require responsive memory performance.
Unique Advantages
- High capacity in a compact package: 32 Gbit total implemented as two 16Gb dies in a 200‑ball FBGA reduces board area while providing large memory capacity.
- High throughput with programmable timing: Support for up to 3733 Mbps data rate and programmable RL/WL lets designers tune performance to system needs.
- Low‑power LPDDR4 architecture: Dual voltage domains (1.8 V and 1.1 V) and LPDDR4 features reduce power consumption in battery‑sensitive devices.
- Flexible refresh and power management: Per‑bank refresh, PASR and ATCSR enable targeted refresh strategies and temperature‑aware self‑refresh for reliability and power savings.
- Industrial temperature capability: Option for −40 °C to +95 °C operation supports deployment in thermally demanding environments.
- System integration friendly interfaces: Differential clocks, differential DQS and DMI support simplify high‑speed signal integrity design and write‑masking functionality.
Why Choose C3222PM4CDGUIW-U?
The C3222PM4CDGUIW-U delivers high memory density and LPDDR4 efficiency in a compact 200‑ball FBGA package, making it a practical choice for designers needing large capacity and high bandwidth in space‑constrained, low‑power systems. Its programmable latency, driver strength and advanced refresh features provide design flexibility for optimizing performance and power across a range of use cases.
This device is suited to engineers developing mobile, handheld and industrial products that require robust thermal performance and configurable memory behavior. The combination of industrial temperature support, multi‑bank architecture and LPDDR4 power domains makes it a scalable option for designs that balance throughput, energy use and environmental resilience.
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