EDFB164A1MA-JD-F-R TR
| Part Description |
IC DRAM 32GBIT PARALLEL 933MHZ |
|---|---|
| Quantity | 449 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR3 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial (Extended) | ||
| Clock Frequency | 933 MHz | Voltage | 1.14V ~ 1.95V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of EDFB164A1MA-JD-F-R TR – IC DRAM 32GBIT PARALLEL 933MHZ
The EDFB164A1MA-JD-F-R TR is a 32 Gbit volatile DRAM device implementing mobile LPDDR3 SDRAM technology with a parallel memory interface. It is specified with a 933 MHz clock frequency, a 512M × 64 memory organization and a supply voltage range of 1.14 V to 1.95 V.
Its documented operating temperature range of −30°C to 85°C and high-density organization make it suitable for designs requiring large-capacity volatile memory built on mobile LPDDR3 architecture.
Key Features
- Core / Technology Mobile LPDDR3 SDRAM technology providing the device architecture.
- Memory Capacity & Organization 32 Gbit total capacity organized as 512M × 64 for high-density memory integration.
- Clock Frequency Rated for a 933 MHz clock frequency to match system timing requirements.
- Memory Interface Parallel memory interface suitable for systems designed for parallel DRAM connections.
- Power Supply Supply voltage range from 1.14 V to 1.95 V to accommodate varying power-domain designs.
- Volatile Memory Type Specified as volatile DRAM for temporary data storage in active system operation.
- Operating Temperature Specified ambient range of −30°C to 85°C for deployment across a range of environmental conditions.
Unique Advantages
- High-density 32 Gbit capacity: Enables compact integration of large volatile storage without combining multiple devices.
- 512M × 64 organization: Provides a clear memory mapping useful for system address and data planning.
- Mobile LPDDR3 architecture: Aligns with mobile SDRAM design approaches where LPDDR3 technology is required.
- 933 MHz clock rate: Supports systems that require operation at this specified clock frequency.
- Wide supply voltage range: 1.14 V to 1.95 V supports flexibility in power-rail design choices.
- Extended temperature range: −30°C to 85°C for applications that operate across varied ambient conditions.
Why Choose IC DRAM 32GBIT PARALLEL 933MHZ?
The EDFB164A1MA-JD-F-R TR is positioned for designs that require a high-density, mobile LPDDR3 SDRAM device with a parallel interface and a defined 933 MHz operating clock. Its 32 Gbit capacity and 512M × 64 organization provide a clear memory footprint for system architects.
With a broad supply voltage range and an operating temperature span from −30°C to 85°C, this device offers integration flexibility for applications that demand sizable volatile memory in environments with varying power and temperature conditions.
Request a quote or contact sales to obtain pricing, availability, and additional ordering information for the EDFB164A1MA-JD-F-R TR.
