EDFB232A1MA-GD-F-R TR

The EDFB232A1MA-GD-F-R TR is a 32 Gbit volatile DRAM device implemented in Mobile LPDDR3 SDRAM technology. It provides a 1G × 32 memory organization with a parallel memory interface and an 800 MHz clock frequency.

This device is intended for designs that require high-density volatile memory in an LPDDR3 architecture, offering a combination of capacity, measured clock performance, and measurable operating voltage and temperature ranges.

Key Features

• Memory Core Mobile LPDDR3 SDRAM technology; volatile DRAM format optimized for high-density memory implementations.
• Memory Capacity & Organization 32 Gbit total capacity with a 1G × 32 organization for wide-data, high-density memory arrays.
• Performance 800 MHz clock frequency specified to support high-throughput parallel memory operations.
• Interface Parallel memory interface for integration into systems using parallel DRAM subsystems.
• Voltage Range Supply voltage range from 1.14 V to 1.95 V, allowing operation across multiple LPDDR3-compatible power domains.
• Operating Temperature Specified operating ambient temperature from −30 °C to 85 °C to cover a broad range of thermal environments.

Typical Applications

• Mobile devices — Used as high-density volatile memory in LPDDR3-based mobile platforms and memory subsystems.
• Portable consumer electronics — Provides large-capacity DRAM for devices where compact, high-capacity memory is required.
• Embedded systems — Suitable for embedded designs needing 32 Gbit of parallel DRAM with defined operating voltage and temperature ranges.

Unique Advantages

• High-capacity memory: 32 Gbit density enables designs that require large volatile storage in a single DRAM component.
• LPDDR3 architecture: Built on Mobile LPDDR3 SDRAM technology for designs targeting LPDDR3-based memory architectures.
• Defined high-frequency operation: 800 MHz clock frequency supports elevated data-rate requirements within the device’s specified limits.
• Flexible supply voltage: Operates across 1.14 V to 1.95 V, accommodating different LPDDR3 power configurations.
• Wide operating temperature: −30 °C to 85 °C ambient rating for deployment across a range of thermal conditions.
• Parallel interface: Parallel memory interface simplifies integration into parallel DRAM subsystem designs.

Why Choose EDFB232A1MA-GD-F-R TR?

The EDFB232A1MA-GD-F-R TR from Micron Technology Inc. positions itself as a high-density LPDDR3 parallel DRAM option delivering 32 Gbit capacity at an 800 MHz clock rate, with a well-defined supply voltage window and extended operating temperature range. It is suited to designs that require significant volatile memory capacity within LPDDR3-based architectures.

Designers and procurement teams seeking a discrete high-capacity DRAM component can evaluate this device for mobile, portable, and embedded applications where the specified capacity, frequency, voltage range, and temperature window align with system requirements.

Request a quote or contact sales to discuss availability and pricing for EDFB232A1MA-GD-F-R TR.