EDFB232A1MA-JD-F-R TR

The EDFB232A1MA-JD-F-R TR from Micron Technology Inc. is a volatile DRAM device implemented as SDRAM - Mobile LPDDR3 with a 32 Gbit capacity. It is organized as 1G × 32 and supports parallel memory interfacing at a clock frequency of 933 MHz.

Designed for applications that require high-density, high-frequency mobile SDRAM, this device provides a wide operating voltage range and extended operating temperature to support a variety of system environments.

Key Features

• Memory Core  32 Gbit DRAM capacity organized as 1G × 32, providing a high-density single-component memory option.
• Technology  SDRAM - Mobile LPDDR3 architecture, suitable where mobile LPDDR3 memory topology is required.
• Performance  Clock frequency of 933 MHz to support high-speed parallel memory operations.
• Interface  Parallel memory interface for designs that integrate parallel DRAM subsystems.
• Power  Operating supply voltage range from 1.14 V to 1.95 V to support varying power-rail designs.
• Environmental Range  Operating temperature range of -30°C to 85°C (TA) for deployment across a broad set of thermal environments.
• Volatility  Volatile memory format appropriate for system memory and buffering applications.

Typical Applications

• Mobile memory subsystems  Used where LPDDR3 mobile SDRAM is required to provide 32 Gbit of high-density memory in a parallel configuration.
• Embedded systems  Provides high-capacity volatile storage for embedded designs that require 1G × 32 organization and a 933 MHz clock.
• High-density buffering  Suitable for applications needing parallel DRAM buffers with a wide supply voltage range (1.14 V–1.95 V) and extended temperature operation.

Unique Advantages

• High-density single device:  32 Gbit capacity reduces component count when high memory density is required.
• LPDDR3 architecture:  Mobile SDRAM technology aligns with designs built around LPDDR3 memory characteristics.
• 933 MHz clock operation:  Supports high-frequency memory transactions for performance-sensitive applications.
• Flexible voltage support:  1.14 V to 1.95 V supply range enables compatibility with varied power-rail configurations.
• Extended temperature range:  -30°C to 85°C operating range supports deployment in diverse thermal environments.
• Parallel interface:  Parallel memory interface accommodates designs leveraging parallel DRAM topologies and signal architectures.

Why Choose IC DRAM 32GBIT PARALLEL 933MHZ?

The EDFB232A1MA-JD-F-R TR delivers a high-density LPDDR3 SDRAM solution with a 1G × 32 organization and 933 MHz clocking, suited to designs that require substantial volatile memory in a parallel interface. Its broad supply voltage range and extended operating temperature make it adaptable to a variety of system power and environmental constraints.

This device is appropriate for engineers and procurement teams specifying mobile LPDDR3 memory where capacity, frequency, and operational flexibility are primary considerations. Its specifications support scalable implementations in embedded and mobile-oriented memory subsystems.

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