EDFB232A1MA-JD-F-D

The EDFB232A1MA-JD-F-D is a 32 Gbit volatile DRAM device from Micron Technology Inc. implemented in mobile LPDDR3 SDRAM technology. It is organized as 1G × 32 and operates with a clock frequency of 933 MHz, providing a high-density memory option for designs that require LPDDR3-class DRAM with a parallel interface.

This device supports a wide supply voltage range and an extended operating temperature range, making it suitable for systems that need flexible power operation and reliable performance across diverse ambient conditions.

Key Features

• Memory Type and Technology Volatile DRAM implemented as Mobile LPDDR3 SDRAM, providing LPDDR3 architecture in a parallel memory format.
• Capacity & Organization 32 Gbit total capacity, organized as 1G × 32 bits to match 32-bit data bus designs.
• Performance 933 MHz clock frequency for memory operations, enabling higher data-rate operation within LPDDR3 specifications.
• Voltage Range Supports a supply voltage range of 1.14 V to 1.95 V to accommodate different power modes and system designs.
• Operating Temperature Rated for −30°C to 85°C (TA), allowing use across a broad ambient temperature span.
• Memory Interface Parallel memory interface suitable for systems that integrate LPDDR3 parallel DRAM modules.

Typical Applications

• Mobile Devices — Use as high-density LPDDR3 memory for devices and modules that require 32 Gbit DRAM capacity with a parallel interface.
• Embedded Systems — Suitable for embedded platforms that need volatile, high-capacity DRAM and a broad operating temperature range.
• Consumer Electronics — Integration into consumer products where LPDDR3 memory is required and supply voltage flexibility is beneficial.
• Network and Communication Equipment — Deployment in systems that require parallel DRAM capacity and reliable operation across varied temperatures.

Unique Advantages

• High Density 32 Gbit Capacity: Provides substantial memory capacity in a single device to simplify system memory architecture.
• LPDDR3 Technology: Mobile LPDDR3 SDRAM architecture supports use cases requiring this specific technology node.
• 933 MHz Clock Frequency: Delivers elevated clock rate for memory operations consistent with the specified frequency.
• Wide Supply Voltage Range: 1.14 V to 1.95 V operation enables design flexibility for multiple power domains and modes.
• Broad Operating Temperature: Rated −30°C to 85°C (TA) for deployment across a range of environmental conditions.
• 1G × 32 Organization: Matches 32-bit data bus topologies to simplify interface design.

Why Choose IC DRAM 32GBIT PARALLEL 933MHZ?

The EDFB232A1MA-JD-F-D positions itself as a high-density LPDDR3 DRAM option from Micron Technology Inc., offering 32 Gbit capacity, a 933 MHz clock frequency, and a 1G × 32 organization that aligns with parallel memory bus designs. Its flexible supply voltage range and extended operating temperature rating help accommodate diverse system requirements.

This device is suited for designers and procurement teams specifying LPDDR3-class volatile memory where capacity, interface compatibility, and voltage flexibility are key selection criteria. Its specification set supports scalability and predictable integration into systems that require LPDDR3 parallel DRAM.

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