EDFB164A1MA-JD-F-D

The EDFB164A1MA-JD-F-D is a 32 Gbit volatile DRAM device implementing Mobile LPDDR3 SDRAM architecture. It provides a parallel memory interface with a 512M × 64 organization and a 933 MHz clock frequency for high-density memory requirements.

This device targets system designs that require a 32 Gbit parallel DRAM solution with low-voltage operation and a broad operating temperature range.

Key Features

• Memory Type & Technology  Volatile DRAM implemented as SDRAM - Mobile LPDDR3 for mobile LPDDR3 memory architectures.
• Capacity & Organization  32 Gbit total capacity organized as 512M × 64 to support wide-data parallel memory buses.
• Clock Frequency  933 MHz clock frequency to support high-throughput parallel memory access patterns.
• Interface  Parallel memory interface suitable for systems that use parallel DRAM connectivity.
• Power  Operates across a voltage supply range of 1.14 V–1.95 V to accommodate low-voltage system designs.
• Operating Temperature  Rated for ambient operating temperatures from -30°C to 85°C (TA) to support a wide range of environmental conditions.
• Memory Format  DRAM format intended for high-density, transient storage in electronic systems.

Typical Applications

• Mobile memory subsystems  Integration where Mobile LPDDR3 SDRAM is required for parallel memory architectures.
• High-density memory modules  Use in designs that need 32 Gbit capacity with 512M × 64 organization to provide wide data paths.
• Embedded systems with wide operating range  Systems that require operation from -30°C to 85°C and support low-voltage memory supplies.

Unique Advantages

• High capacity:  32 Gbit density provides substantial memory for data buffering and transient storage.
• Wide-data organization:  512M × 64 organization supports 64-bit parallel data transfers for bus-efficient designs.
• High clock rate:  933 MHz clock frequency enables higher throughput for parallel memory access.
• Low-voltage operation:  1.14 V–1.95 V supply range supports power-sensitive designs and varied system rails.
• Broad temperature tolerance:  -30°C to 85°C (TA) rating suits designs deployed across a range of ambient conditions.

Why Choose EDFB164A1MA-JD-F-D?

The EDFB164A1MA-JD-F-D combines a high 32 Gbit capacity with a 512M × 64 organization and a 933 MHz clock to deliver a parallel LPDDR3 SDRAM solution suitable for designs that need substantial, wide-path transient memory. Its low-voltage supply range and extended operating temperature window make it a practical choice for systems requiring both energy-aware operation and environmental robustness.

This device is appropriate for engineers and procurement teams specifying high-density parallel DRAM in mobile LPDDR3-based memory subsystems, embedded platforms, and memory modules where the listed electrical and environmental characteristics align with system requirements.

Please request a quote or contact sales to discuss availability, lead times, and pricing for EDFB164A1MA-JD-F-D.