EDFB164A1MA-GD-F-D
| Part Description |
IC DRAM 32GBIT PARALLEL 800MHZ |
|---|---|
| Quantity | 142 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR3 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial (Extended) | ||
| Clock Frequency | 800 MHz | Voltage | 1.14V ~ 1.95V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 512M x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of EDFB164A1MA-GD-F-D – IC DRAM 32GBIT PARALLEL 800MHZ
The EDFB164A1MA-GD-F-D is a 32 Gbit volatile memory device from Micron Technology Inc. implemented using mobile LPDDR3 SDRAM technology. It is organized as 512M x 64 and provides a parallel DRAM interface operating at an 800 MHz clock frequency.
This device targets designs that require high-density, high-frequency volatile memory and offers a broad operating voltage range and ambient temperature tolerance for diverse system requirements.
Key Features
- Memory Core Mobile LPDDR3 SDRAM technology with a 32 Gbit capacity organized as 512M x 64.
- Interface & Organization Parallel DRAM interface supporting a 512M x 64 memory organization for wide data paths.
- Performance 800 MHz clock frequency to support high-bandwidth memory operations within device constraints.
- Power Supported supply voltage range from 1.14 V to 1.95 V to accommodate varying system power rails.
- Operating Temperature Rated for ambient operation from -30°C to 85°C (TA), enabling use across a range of thermal environments.
- Memory Format Volatile DRAM suitable for transient storage requirements in system memory subsystems.
- Manufacturer Produced by Micron Technology Inc.
Typical Applications
- High-density memory subsystems — Provides 32 Gbit of parallel DRAM capacity where wide data-path memory arrays are required.
- High-frequency memory interfaces — Suitable for systems leveraging an 800 MHz clock for memory operations.
- Power-sensitive designs — Operates across a 1.14 V to 1.95 V supply range to match varied system power architectures.
Unique Advantages
- High memory density: 32 Gbit capacity in a 512M x 64 organization provides substantial storage for volatile data needs.
- LPDDR3 technology: Mobile LPDDR3 SDRAM architecture enables a defined balance of performance and power characteristics within the specified voltage range.
- High clock rate: 800 MHz operating frequency supports elevated memory throughput for parallel DRAM applications.
- Wide operating conditions: Specified ambient temperature range of -30°C to 85°C and broad supply voltage support adaptable deployment across environments.
- Parallel interface: 512M x 64 organization and parallel DRAM interface simplify integration into systems requiring wide data buses.
Why Choose IC DRAM 32GBIT PARALLEL 800MHZ?
The EDFB164A1MA-GD-F-D positions itself as a high-density LPDDR3 parallel DRAM option offering 32 Gbit capacity, an 800 MHz clock frequency, and a wide supply voltage range. Its specified ambient temperature range supports deployment in systems with varied thermal requirements.
This device is appropriate for designs that require volatile, high-capacity parallel memory with defined performance and power characteristics. Its combination of density, clock frequency, and supply flexibility provides long-term value for systems needing scalable volatile storage.
Request a quote or submit an inquiry for EDFB164A1MA-GD-F-D to check availability and pricing for your project needs.
