F59L4G81XB-25BIG2X

4Gb NAND Flash Ind.
Part Description

SLC NAND Flash, 4Gbit, 3.3V, x8, 25ns, Industrial

Quantity 1,437 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageBGA-63Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size4 GbitAccess Time20 nsGradeIndustrial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page200 µsPackaging63-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.71

Overview of F59L4G81XB-25BIG2X – SLC NAND Flash, 4Gbit, 3.3V, x8, 25ns, Industrial

The F59L4G81XB-25BIG2X is a 4.295 Gbit single-level cell (SLC) NAND Flash device organized as 512M × 8. It implements an asynchronous parallel NAND interface and is offered in a 63-ball BGA surface-mount package aimed at industrial applications.

Designed for embedded and industrial storage applications, this device combines SLC endurance and retention characteristics with ONFI 1.0-compliant command support, on-die ECC options, and a wide operating voltage and temperature window for robust system integration.

Key Features

  • Memory & Organization  4.295 Gbit capacity organized as 512M × 8 with a page size of 4,352 bytes (4,096 + 256) and 64-page blocks.
  • Technology  Single-level cell (SLC) NAND Flash for non-volatile data storage and endurance-focused operation.
  • Performance  Asynchronous I/O with RC/WC timing of 25 ns (ordering speed grade) and documented read/program/erase timings (read page: 115 µs max with on-die ECC enabled / 25 µs max with on-die ECC disabled; program page: 200 µs typical with ECC disabled, 240 µs typical with ECC enabled; erase block: 2 ms typical).
  • Interface & Command Set  Parallel NAND interface using a highly multiplexed 8-bit I/O bus with standard control signals (CE#, CLE, ALE, WE#, RE#) and ONFI 1.0-compliant command set.
  • Power & Voltage  Operates across a wide supply range: Vcc 2.7–3.6 V (nominal 3.3 V).
  • Reliability & Endurance  Endurance rated to 100,000 program/erase cycles; data retention and qualification follow JEDEC guidelines with uncycled data retention specified as 10 years at 70°C.
  • System Signals & Protection  Hardware status and protection signals including R/B# (Ready/Busy), WP# (write protect entire device) and RESET required after power-on. Internal 8-bit ECC is available and can be enabled or disabled via SET FEATURE.
  • Package & Temperature  63-ball BGA (surface mount) in an industrial grade device with an operating temperature range of −40°C to 85°C.
  • Advanced Features  Support for program/read cache modes, permanent block locking, one-time programmable (OTP) mode, programmable drive strength, read unique ID, and internal data-move operations within a plane.

Typical Applications

  • Industrial Storage Systems  Non-volatile SLC storage for factory automation and control systems where endurance and wide-temperature operation are required.
  • Embedded Controllers  Local code and data storage for embedded platforms that require an asynchronous parallel NAND interface and program/erase durability.
  • Data Logging & Instrumentation  Long-term data retention and high P/E cycle endurance make this device suited for continuous logging and measurement equipment.
  • Networking & Communication Equipment  Reliable firmware and configuration storage in systems that benefit from JEDEC-qualified memory and on-die ECC options.

Unique Advantages

  • Industrial-grade endurance: 100,000 program/erase cycles support sustained write-intensive use cases in harsh environments.
  • Wide operating window: Vcc 2.7–3.6 V and −40°C to 85°C operation simplify deployment across diverse industrial platforms.
  • SLC reliability and retention: Single-level cell design plus uncycled data retention of 10 years at 70°C provides predictable long-term storage behavior.
  • ONFI 1.0 compatibility: Standardized NAND command set and asynchronous interface reduce integration effort and enable straightforward upgrades to compatible devices.
  • Flexible error management: Internal 8-bit ECC can be enabled or disabled via SET FEATURE to match system-level ECC strategies.
  • Space-efficient package: 63-ball BGA surface-mount packaging delivers a compact footprint for board-level integration.

Why Choose F59L4G81XB-25BIG2X?

The F59L4G81XB-25BIG2X delivers industry-focused NAND flash characteristics—SLC technology, JEDEC qualification, and documented endurance and retention—that make it a reliable choice for embedded and industrial storage designs. Its ONFI-compliant asynchronous interface, programmable ECC behavior, and advanced command features provide designers with flexibility for firmware storage, data logging, and high-reliability applications.

With a robust operating voltage range, industrial temperature rating, and a compact 63-ball BGA package, this device is tailored for systems where long-term data integrity, endurance, and predictable performance are essential.

Request a quote or submit an RFQ to procure F59L4G81XB-25BIG2X for your next design.

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