F59L4G81XB-IP(2X)

4Gb NAND Flash Ind.
Part Description

Ind. -40~105°C, SLC NAND, 3.3V

Quantity 1,352 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGAMemory FormatNAND FlashTechnologySLC NAND Flash
Memory Size4 GbitAccess Time20 nsGradeIndustrial
Clock FrequencyN/AVoltage2.5VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page200 µsPackaging48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.71

Overview of F59L4G81XB-IP(2X) – Ind. -40~105°C, SLC NAND, 3.3V

The F59L4G81XB-IP(2X) from ESMT is a 4 Gbit single-level cell (SLC) NAND flash memory device organized as 512M × 8. Designed for industrial-grade applications, it provides non-volatile parallel NAND storage with an ONFI 1.0-compliant interface and an extended operating temperature range of -40°C to 105°C.

This device targets embedded and industrial systems requiring durable, high-endurance NAND storage with on-die ECC options, flexible command sets (including program/read cache modes and OTP), and multiple package options for surface-mount integration.

Key Features

  • Memory Architecture 4 Gbit SLC NAND organized as 512M × 8 with a page size of 4,352 bytes (4,096 + 256) and a block size of 64 pages; single-plane die organization.
  • Interface and Protocol 8-bit parallel NAND interface using a highly multiplexed I/O bus (I/Ox) with standard asynchronous control signals (CE#, CLE, ALE, WE#, RE#) and ONFI 1.0 compliance.
  • Voltage and Power Operating voltage range VCC: 2.7–3.6 V (nominal 3.3 V) as specified for 3.3V NAND operation.
  • Performance Asynchronous I/O timing RC/WC: 25 ns; read page latency up to 115 μs with on-die ECC enabled (25 μs with ECC disabled); typical program page time 200 μs (240 μs with on-die ECC enabled); typical block erase 2 ms.
  • Data Integrity and Management 8-bit internal ECC (disabled by default and toggleable via SET FEATURE); permanent block locking (blocks 47:0); on-die features include OTP mode, block lock, read unique ID, and internal data move.
  • Reliability Endurance rated at 60,000 program/erase cycles and JESD47G-compliant data retention; uncycled data retention specified as 10 years at 105°C.
  • Industrial Grade & Compliance Industrial temperature operation (-40°C to 105°C), JEDEC qualification, and RoHS compliance for industrial system deployment.
  • Packages & Mounting Available in multiple surface-mount packages: 48-pin TSOPI, 63-ball BGA, and 67-ball BGA to support different board-level integration and density requirements.

Typical Applications

  • Industrial Storage and Data Logging High endurance and wide-temperature operation make this device suitable for long-term non-volatile data retention in industrial data loggers and recorders.
  • Embedded System Firmware Storage Parallel NAND and standard command support provide reliable firmware and boot storage for embedded controllers and system controllers.
  • Industrial Control and Automation Robust endurance and JEDEC-class retention support firmware and configuration storage in industrial automation equipment operating across wide temperature ranges.
  • Networking and Communications Appliances Non-volatile storage for boot images, configuration and logging in network appliances that require industrial-grade memory components.

Unique Advantages

  • Industrial Temperature Range: Ensures operation from -40°C to 105°C for deployments in harsh environments.
  • SLC Endurance: 60,000 program/erase cycles deliver long service life for write-intensive applications.
  • Flexible ECC and Data Management: Built-in 8-bit ECC (toggleable) plus OTP and block-lock features enable adaptable data integrity strategies.
  • ONFI-Compliant Interface: Standardized ONFI 1.0 protocol and an 8-bit parallel bus simplify integration and future upgrades.
  • Multiple Packaging Options: Choice of TSOPI and BGA packages supports varied board-level requirements and mechanical constraints.
  • Long-Term Retention at High Temperature: Uncycled data retention specified for 10 years at 105°C supports archival needs in hot environments.

Why Choose F59L4G81XB-IP(2X)?

The F59L4G81XB-IP(2X) balances industrial-grade robustness with NAND-specific features required for reliable embedded storage: SLC cell technology for endurance, ONFI compatibility for standard interfacing, and a suite of management features such as on-die ECC, OTP, and block locking. Its specified endurance, retention, and extended temperature range make it a practical choice for systems that must operate continuously in demanding conditions.

This device is well suited for designers and procurement teams building industrial automation, data logging, and embedded control systems who need a JEDEC-qualified, RoHS-compliant SLC NAND solution available in common surface-mount packages.

Request a quote or submit an inquiry to receive pricing, availability, and support information for the F59L4G81XB-IP(2X).

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