F59L8G81KSA-25BG2R

The F59L8G81KSA-25BG2R is an 8.59 Gbit single-level cell (SLC) NAND Flash memory device organized as 512M × 8 × 2 die. It provides parallel x8 I/O and operates from a 2.7 V to 3.6 V supply, delivering high-density non-volatile storage for embedded and consumer applications.

Designed for applications such as solid-state file storage, voice recording and image file memory for still cameras, this device combines SLC endurance and retention characteristics with page/block management and cache operations to support reliable data storage and system boot scenarios.

Key Features

• Density & Organization — 8.59 Gbit total capacity, organized as 512M × 8 × 2 die for stacked-memory operations and large addressable capacity.
• SLC Flash Technology — Single-level cell architecture (1 bit/cell) for higher endurance and data retention compared with multi-level cell technologies.
• Page and Block Architecture — Page size (4K + 256) bytes and block size of 64 pages (256K + 16K bytes) to support efficient program/erase and large transfer operations.
• Performance — Parallel x8 interface with an access time of 20 ns and supported cache program/read and copy-back operations to improve effective throughput in system designs.
• Program/Erase Timing — Page program typical and maximum timings documented (page program times and block erase times available in datasheet) to help design predictable write/erase cycles.
• Endurance & Retention — Endurance rated to 60K program/erase cycles with uncycled data retention specified at 10 years (at 55 °C) for long-term storage reliability.
• ECC Requirement — ECC requirement of 8 bit per 512 bytes, enabling appropriate error management in host designs.
• Power and Interface — Supply voltage range 2.7 V to 3.6 V and parallel command/address/data multiplexed DQ port for conventional NAND host controllers.
• Package & Mounting — Surface-mount 63-ball BGA package (BGA-63) for compact board integration.
• Compliance & Grade — Commercial grade device with RoHS compliance; designed for standard embedded and consumer environments.

Typical Applications

• Solid-State File Storage — High-density non-volatile storage for removable or embedded file systems where reliable program/erase cycles are required.
• Still Cameras & Imaging — Image file memory for cameras, leveraging large page/block architecture and cache program/read to manage large file transfers.
• Voice Recorders & Audio Recording — Persistent storage for audio data with robust SLC endurance for frequent write cycles.
• Embedded Consumer Devices — Firmware storage and boot-from-NAND support for consumer electronics and embedded controllers within specified commercial temperature range.

Unique Advantages

• SLC Reliability: Single-level cell design (1 bit/cell) and 60K P/E cycle endurance provide robust lifecycle characteristics for frequent write/erase use cases.
• Large, Efficient Data Units: 4K+256 byte page and 64-page block structure simplify large-file programming and block erase operations.
• Built-in Boot and Cache Support: Boot-from-NAND option plus cache program/read and copy-back operations streamline system boot and improve effective program/read throughput.
• Host-Level Error Management: Specified ECC requirement (8-bit/512-byte) lets system designers implement appropriate error correction strategies for reliable data integrity.
• Flexible Supply Range: 2.7 V–3.6 V operation supports typical 3.3 V system supplies, easing integration into existing designs.
• Compact BGA Footprint: 63-ball BGA package enables high-density board layouts and surface-mount assembly.

Why Choose F59L8G81KSA-25BG2R?

The F59L8G81KSA-25BG2R positions as a high-density SLC NAND solution for designs requiring durable, long-retention non-volatile memory with established page/block management and host ECC requirements. Its parallel x8 interface, stacked die organization and BGA-63 package allow compact integration into consumer and embedded systems that need reliable file storage and boot support.

With documented program/erase timings, endurance, and retention guidance, the device is suited to designers who require predictable lifecycle behavior and straightforward NAND management in commercial-grade applications.

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