F59L4G81XB-25TIAG2X

4Gb NAND Flash Auto.
Part Description

SLC NAND Flash, 4Gbit, Automotive

Quantity 941 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageTSOPI-48Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size4 GbitAccess Time20 nsGradeAutomotive
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C – 105°CWrite Cycle Time Word Page200 µsPackaging48-TSOPI
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.00.71

Overview of F59L4G81XB-25TIAG2X – SLC NAND Flash, 4Gbit, Automotive

The F59L4G81XB-25TIAG2X is a single-level cell (SLC) NAND Flash memory device organized as 512M × 8 for 4.295 Gbit non-volatile storage. Designed for parallel asynchronous operation with an ONFI 1.0-compliant interface, this device targets embedded storage roles that require endurance, data retention and automotive-grade qualification.

With a 2.7–3.6 V supply range, AEC-Q100 qualification, and an extended operating temperature from −40 °C to 105 °C, the F59L4G81XB series supports demanding environments while providing on-die features such as internal ECC, page-cache modes and hardware status signals for reliable integration.

Key Features

  • Memory Architecture — 4.295 Gbit organized as 512M × 8 (page size 4,352 bytes: 4,096 + 256), block size of 64 pages and one plane, suitable for structured page/block flash management.
  • Technology & Endurance — SLC NAND Flash technology with specified endurance of 100,000 program/erase cycles and uncycled data retention of 10 years (24/7 @ 70 °C).
  • Interface & Protocols — Parallel asynchronous I/O using a highly multiplexed 8-bit bus (I/Ox) and ONFI 1.0-compliant command set; hardware signals include CE#, R/B#, WP#, CLE, ALE, WE# and RE# for standard NAND control.
  • Performance — Read and program timing options available in the series, with program page typical times listed (200 µs program page typical with on-die ECC disabled; 240 µs with ECC enabled) and asynchronous RC/WC timing noted in the series.
  • Power & Voltage — Single-supply operation across 2.7–3.6 V to support 3.3 V systems and mixed-voltage embedded platforms.
  • Reliability & Data Integrity — 8-bit internal ECC (disabled by default and toggleable via SET FEATURE); factory-shipped block 0 valid with ECC. RESET required after power-on; device supports permanent block locking and OTP mode.
  • Package & Mounting — Surface-mount TSOPI-48 package (12 mm × 20 mm, 0.5 mm pitch) for compact board-level integration.
  • Automotive Qualification — Grade: Automotive with AEC-Q100 qualification and extended operating temperature (−40 °C to 105 °C) for harsh environments.

Typical Applications

  • Automotive systems — Firmware storage and data logging where AEC-Q100 qualification and wide temperature range are required.
  • Industrial control — Non-volatile program and configuration storage in systems that need endurance and long data retention under elevated temperatures.
  • Embedded storage — Page/block structured storage for embedded devices that rely on parallel NAND command sets and ONFI compatibility.

Unique Advantages

  • Automotive-qualified endurance: AEC-Q100 qualification combined with 100,000 program/erase cycles supports long service life in automotive and industrial deployments.
  • SLC reliability and retention: Single-level cell architecture and JESD47G-compliant data retention practices provide predictable endurance and up to 10 years uncycled retention at 70 °C.
  • ONFI 1.0 compatibility: Standardized ONFI protocol and a multiplexed 8-bit interface simplify integration with controllers that support NAND Flash standards.
  • Built-in integrity controls: Internal 8-bit ECC (configurable), block locking and OTP support reduce system-level error management overhead.
  • Wide operating range: 2.7–3.6 V supply and −40 °C to 105 °C operation enable deployment across diverse embedded environments.
  • Compact TSOPI-48 package: Low-profile surface-mount package facilitates board space savings while providing a standardized pinout for density upgrades.

Why Choose F59L4G81XB-25TIAG2X?

The F59L4G81XB-25TIAG2X positions itself as a robust SLC NAND Flash solution combining endurance, automotive qualification and standardized ONFI interfacing for embedded storage designs. Its endurance, retention specifications and configurable on-die ECC make it suitable for applications that require predictable lifecycle behavior and data integrity under wide temperature and voltage conditions.

This device is ideal for engineers and designers building automotive or industrial systems that need a compact, AEC-Q100-qualified non-volatile memory with structured page/block architecture, standard NAND command support and surface-mount TSOPI packaging for straightforward board integration.

Request a quote or submit an inquiry to purchase the F59L4G81XB-25TIAG2X or to get additional ordering and lead-time information.

Request a Quote

















    No file selected



    Our team will respond within 24 hours.


    I agree to receive newsletters and promotional emails. I can unsubscribe at any time.

    Certifications and Membership
    NQA AS9100 CMYK ANAB
    NQA AS9100 ANAB Badge
    ESD2020 Badge
    ESD2020 Association Badge
    GIDEP Badge
    GIDEP Badge
    Suntsu ERAI MemberVerification
    Suntsu ERAI Member Verification
    Available Shipping Methods
    FedEx
    UPS
    DHL
    Accepted Payment Methods
    American Express
    American Express
    Discover
    Discover
    MasterCard
    MasterCard
    Visa
    Visa
    UnionPay
    UnionPay

    Date Founded: 1998


    Headquarters: Hsinchu Science Park, Hsinchu, Taiwan


    Employees: 400+


    Revenue: $377.8 Million


    Certifications and Memberships: N/A


    Featured Products
    Latest News
    keyboard_arrow_up