F59L4G81XB-25TIAG2X
| Part Description |
SLC NAND Flash, 4Gbit, Automotive |
|---|---|
| Quantity | 941 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 20 ns | Grade | Automotive | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 105°C | Write Cycle Time Word Page | 200 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L4G81XB-25TIAG2X – SLC NAND Flash, 4Gbit, Automotive
The F59L4G81XB-25TIAG2X is a single-level cell (SLC) NAND Flash memory device organized as 512M × 8 for 4.295 Gbit non-volatile storage. Designed for parallel asynchronous operation with an ONFI 1.0-compliant interface, this device targets embedded storage roles that require endurance, data retention and automotive-grade qualification.
With a 2.7–3.6 V supply range, AEC-Q100 qualification, and an extended operating temperature from −40 °C to 105 °C, the F59L4G81XB series supports demanding environments while providing on-die features such as internal ECC, page-cache modes and hardware status signals for reliable integration.
Key Features
- Memory Architecture — 4.295 Gbit organized as 512M × 8 (page size 4,352 bytes: 4,096 + 256), block size of 64 pages and one plane, suitable for structured page/block flash management.
- Technology & Endurance — SLC NAND Flash technology with specified endurance of 100,000 program/erase cycles and uncycled data retention of 10 years (24/7 @ 70 °C).
- Interface & Protocols — Parallel asynchronous I/O using a highly multiplexed 8-bit bus (I/Ox) and ONFI 1.0-compliant command set; hardware signals include CE#, R/B#, WP#, CLE, ALE, WE# and RE# for standard NAND control.
- Performance — Read and program timing options available in the series, with program page typical times listed (200 µs program page typical with on-die ECC disabled; 240 µs with ECC enabled) and asynchronous RC/WC timing noted in the series.
- Power & Voltage — Single-supply operation across 2.7–3.6 V to support 3.3 V systems and mixed-voltage embedded platforms.
- Reliability & Data Integrity — 8-bit internal ECC (disabled by default and toggleable via SET FEATURE); factory-shipped block 0 valid with ECC. RESET required after power-on; device supports permanent block locking and OTP mode.
- Package & Mounting — Surface-mount TSOPI-48 package (12 mm × 20 mm, 0.5 mm pitch) for compact board-level integration.
- Automotive Qualification — Grade: Automotive with AEC-Q100 qualification and extended operating temperature (−40 °C to 105 °C) for harsh environments.
Typical Applications
- Automotive systems — Firmware storage and data logging where AEC-Q100 qualification and wide temperature range are required.
- Industrial control — Non-volatile program and configuration storage in systems that need endurance and long data retention under elevated temperatures.
- Embedded storage — Page/block structured storage for embedded devices that rely on parallel NAND command sets and ONFI compatibility.
Unique Advantages
- Automotive-qualified endurance: AEC-Q100 qualification combined with 100,000 program/erase cycles supports long service life in automotive and industrial deployments.
- SLC reliability and retention: Single-level cell architecture and JESD47G-compliant data retention practices provide predictable endurance and up to 10 years uncycled retention at 70 °C.
- ONFI 1.0 compatibility: Standardized ONFI protocol and a multiplexed 8-bit interface simplify integration with controllers that support NAND Flash standards.
- Built-in integrity controls: Internal 8-bit ECC (configurable), block locking and OTP support reduce system-level error management overhead.
- Wide operating range: 2.7–3.6 V supply and −40 °C to 105 °C operation enable deployment across diverse embedded environments.
- Compact TSOPI-48 package: Low-profile surface-mount package facilitates board space savings while providing a standardized pinout for density upgrades.
Why Choose F59L4G81XB-25TIAG2X?
The F59L4G81XB-25TIAG2X positions itself as a robust SLC NAND Flash solution combining endurance, automotive qualification and standardized ONFI interfacing for embedded storage designs. Its endurance, retention specifications and configurable on-die ECC make it suitable for applications that require predictable lifecycle behavior and data integrity under wide temperature and voltage conditions.
This device is ideal for engineers and designers building automotive or industrial systems that need a compact, AEC-Q100-qualified non-volatile memory with structured page/block architecture, standard NAND command support and surface-mount TSOPI packaging for straightforward board integration.
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Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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